Polymer resin composition, related method for forming a pattern, and related method for fabricating a capacitor
A polymer resin composition, a method for forming a pattern using the polymer resin composition, and a method for fabricating a capacitor using the polymer resin composition are disclosed. The polymer resin composition includes about 75 to 93 percent by weight of a copolymer prepared from benzyl methacrylate, methacrylic acid, and hydroxyethyl methacrylate; about 1 to 7 percent by weight of a cross-linking agent; about 0.01 to 0.5 percent by weight of a thermal acid generator; about 0.01 to 1 percent by weight of a photoacid generator; about 0.00001 to 0.001 percent by weight of an organic base; and a solvent.
1. A method for forming a blocking pattern comprising:
spin-coating a substrate with a polymer resin composition to form a preliminary blocking layer, wherein the substrate has a die forming region and an edge die region, a first portion of the preliminary blocking layer is disposed in the edge die region, and a second portion of the preliminary blocking layer is disposed in the die forming region;
exposing the first portion of the preliminary blocking layer to light to form a first preliminary blocking pattern in the edge die region; and,
developing the preliminary blocking layer by immersing the substrate in a developing solution to remove a portion of the second portion of the preliminary blocking layer,
wherein the polymer resin composition comprises:
about 75 to 93 percent by weight of a copolymer prepared using benzyl methacrylate, methacrylic acid, and hydroxyethyl methacrylate;
about 1 to 7 percent by weight of a cross-linking agent;
about 0.01 to 0.5 percent by weight of a thermal acid generator;
about 0.01 to 1 percent by weight of a photoacid generator;
about 0.00001 to 0.001 percent by weight of an organic base; and,
a solvent.
2. The method of claim 1 , further comprising thermally treating the substrate to cure at least one portion of the second portion of the preliminary blocking layer remaining on the substrate and the first preliminary blocking pattern disposed in the edge die region.
3. The method of claim 1 , wherein removing the portion of the second portion of the preliminary blocking layer comprises performing a developing process.
4. The method of claim 1 , the copolymer is prepared using about 61 to 75 percent by weight of benzyl methacrylate and about 8 to 15 percent by weight of methacrylic acid.
5. The method of claim 1 , further comprising, prior to spin-coating the substrate with the polymer resin composition, forming a pattern structure having an opening on the substrate.
6. A method for forming a blocking pattern comprising:
forming a pattern structure having an opening on a substrate, wherein the substrate has a die forming region and an edge die region and the opening is disposed in the die forming region;
spin-coating the substrate with a polymer resin composition to form a preliminary blocking layer on the pattern structure and fill the opening, wherein a first portion of the preliminary blocking layer is disposed in the edge die region and a second portion of the preliminary blocking layer is disposed in the die forming region;
exposing the first portion of the preliminary blocking layer to light to form a first preliminary blocking pattern on a portion of the pattern structure disposed in the edge die region;
removing an upper portion of the second portion of the preliminary blocking layer by immersing the substrate in a developing solution to form a second preliminary blocking pattern filling the opening, wherein the upper portion is formed on a portion of the pattern structure disposed in the die forming region; and,
curing the first and second preliminary blocking patterns to form first and second blocking patterns on the substrate.
7. The method of claim 6 , wherein the polymer resin composition comprises:
about 75 to 93 percent by weight of a copolymer prepared using benzyl methacrylate, methacrylic acid, and hydroxyethyl methacrylate;
about 1 to 7 percent by weight of a cross-linking agent;
about 0.01 to 0.5 percent by weight of a thermal acid generator;
about 0.01 to 1 percent by weight of a photoacid generator;
about 0.00001 to 0.001 percent by weight of an organic base; and,
a solvent.
8. The method of claim 6 , wherein forming the pattern structure comprises:
forming a mold layer on the substrate;
forming a photoresist film on the mold layer;
forming a photoresist pattern by performing an exposure process on the photoresist film using a first reticle defining a first reticle image corresponding to a first number of dies; and,
etching the mold layer using the photoresist pattern as an etching mask.
9. The method of claim 8 , wherein exposing the first portion of the preliminary blocking layer to light comprises using a second reticle defining a plurality of second reticle images, wherein each second reticle image corresponds to at least one die but fewer than the first number of dies.