Capacitor, method of increasing a capacitance area of same, and system containing same
View Patent ↗A capacitor includes a substrate ( 110, 210 ), a first electrically insulating layer ( 120, 220 ) over the substrate, and a fin ( 130, 231 ) including a semiconducting material ( 135 ) over the first electrically insulating layer. A first electrically conducting layer ( 140, 810 ) is located over the first electrically insulating layer and adjacent to the fin. A second electrically insulating layer ( 150, 910 ) is located adjacent to the first electrically conducting layer, and a second electrically conducting layer ( 160, 1010 ) is located adjacent to the second electrically insulating layer. The first and second electrically conducting layers together with the second electrically insulating layer form a metal-insulator-metal stack that greatly increases the capacitance area of the capacitor. In one embodiment the capacitor is formed using what may be referred to as a removable metal gate (RMG) approach.
1. A capacitor comprising:
a substrate;
a first electrically insulating layer over the substrate;
a fin comprising a semiconducting material over the first electrically insulating layer;
a first electrically conducting layer over the first electrically insulating layer and adjacent to the fin such that there exists no intervening layer between the first electrically conducting layer and the fin;
a second electrically insulating layer adjacent to the first electrically conducting layer; and
a second electrically conducting layer adjacent to the second electrically insulating layer,
wherein:
the first electrically insulating layer comprises an oxide layer having a first surface;
the fin is a silicon fin having a first portion extending into the first electrically insulating layer and having a second portion protruding from the first surface;
the second electrically insulating layer comprises a high-k dielectric material;
the first electrically conducting layer comprises a first section at a first side of the silicon fin and a second section at an opposing second side of the silicon fin;
a distance between an outside edge of the first section and an outside edge of the second section is a first distance;
the second portion of the silicon fin has a second surface;
a distance between the first surface and the second surface is a second distance; and
the second distance is between approximately six times the first distance and approximately twelve times the first distance.
2. The capacitor of claim 1 wherein:
the capacitor comprises a decoupling capacitor.
3. The capacitor of claim 1 wherein:
the capacitor comprises a tri-gate storage capacitor.
4. The capacitor of claim 1 wherein:
the second electrically conducting layer has a third surface;
a distance between the second surface and the third surface is a third distance; and
the third distance is at least approximately equal to the first distance and as large as approximately twice the first distance.
5. The capacitor of claim 1 wherein:
the first electrically insulating layer comprises a first electrically insulating material;
the first electrically conducting layer comprises a first electrically conducting material; and
the first electrically conducting material comprises a metal having a work function that lies approximately mid-way between a conductive band and a valence band of the first electrically insulating material.
6. The capacitor of claim 5 wherein:
the second electrically conducting layer comprises the first electrically conducting material.
7. A capacitor comprising:
a substrate;
a first electrically insulating layer over the substrate;
a fin comprising a semiconducting material over the first electrically insulating layer;
a first electrically conducting layer over the first electrically insulating layer and adjacent to the fin such that there exists no intervening layer between the first electrically conducting layer and the fin;
a second electrically insulating layer adjacent to the first electrically conducting layer; and
a second electrically conducting layer adjacent to the second electrically insulating layer, wherein:
the first electrically insulating layer comprises a first electrically insulating material;
the first electrically conducting layer comprises a first electrically conducting material; and
the first electrically conducting material comprises a metal having a work function that lies approximately mid-way between a conductive band and a valence band of the first electrically insulating material.
8. The capacitor of claim 7 wherein:
the second electrically conducting layer comprises the first electrically conducting material.