Method for producing a multilayer system on a carrier, in particular in an electrochromic element

1. A method of producing a multilayer system on a substrate comprising the steps of:

applying a first and a second layer on the substrate, in each case using a vacuum coating process, at least one of the layers being applied so as to have a porosity generated by the vacuum coating process;

partly removing the first layer using an ion etching operation after applying the first layer and before applying the second layer, wherein the partly removing includes removing approx. 0.1% to approx. 1% of the first layer.

2. The method as recited in claim 1 , wherein the ion etching operation is carried out in a working atmosphere of argon and oxygen.

3. A method of producing a multilayer system on a substrate comprising the steps of:

applying a first and a second layer on the substrate, in each case using a vacuum coating process, at least one of the layers being applied so as to have a porosity generated by the vacuum coating process;

partly removing the first layer using an ion etching operation after applying the first layer and before applying the second layer, wherein the ion etching operation includes using an ion source operated with an accelerating voltage of approximately 2 kV to approximately 3 kV.

4. A method of producing a multilayer system on a substrate comprising the steps of:

applying a first and a second layer on the substrate, in each case using a vacuum coating process, at least one of the layers being applied so as to have a porosity generated by the vacuum coating process;

partly removing the first layer using an ion etching operation after applying the first layer and before applying the second layer, further comprising applying an ion storage layer to the substrate before applying the first layer, and wherein the first layer is a transparent solid-state electrolytic layer, the second layer is an electrochromic layer, and the substrate is transparent.

5. The method as recited in claim 4 , further comprising applying a reflective layer on the electrochromic layer.

6. The method as recited in claim 5 , wherein the reflective layer includes aluminium.

7. The method as recited in claim 4 , wherein the electrochromic layer includes at least one of molybdenum oxide, titanium oxide, vanadium oxide, niobium oxide, chromium oxide, manganese oxide, iron oxide, cobalt oxide, nickel oxide, rhodium oxide, tantalum oxide, iridium oxide and tungsten oxide.

8. The method as recited in claim 4 , wherein the solid-state electrolytic layer includes at least one of zirconium oxide, silicon oxide, aluminium oxide, selenium oxide and tantalum oxide.

9. The method as recited in claim 4 , wherein the ion storage layer includes a further electrochromic layer.

10. The method as recited in claim 4 , wherein the ion storage layer includes at least one of iridium oxide, iridium-magnesium oxide, nickel oxide, nickel-magnesium oxide, manganese oxide, cobalt oxide, titanium-vanadium oxide and iridium-tantalum oxide.

11. The method as recited in claim 4 , further comprising applying an electrode layer adjacent to the ion storage layer.

12. The method as recited in claim 11 , wherein the electrode layer includes at least one of indium-tin oxide and Sb-doped tin oxide, and Al-doped zinc oxide.

13. The method as recited in claim 4 , wherein the multilayer system is an electrochromic element.

14. The method as recited in claim 1 , wherein the at least one layer having a porosity is the first layer.

15. The method as recited in claim 3 , wherein the at least one layer having a porosity is the first layer.

16. The method as recited in claim 4 , wherein the at least one layer having a porosity is the first layer.

17. The method as recited in claim 3 , wherein the ion etching operation is carried out in a working atmosphere of argon and oxygen.

18. The method as recited in claim 4 , wherein the ion etching operation is carried out in a working atmosphere of argon and oxygen.