Metal oxide semiconductor transistor with Y shape metal gate and fabricating method thereof
View Patent ↗A method of manufacturing a metal oxide semiconductor transistor having a metal gate is provided. The method firstly includes a step of providing a substrate. A dummy gate is formed on the substrate, a spacer is formed around the dummy gate, and doped regions are formed in the substrate outside of the dummy gate. A bevel edge is formed on the spacer, and a trench is formed in the inner sidewall of the spacer. A barrier layer, and a metal gate are formed in the trench and on the bevel edge, and the barrier layer will not form poor step coverage.
1. A method of manufacturing a metal oxide semiconductor transistor with a metal gate, comprising:
providing a substrate, a gate temporary layer formed on the substrate, a spacer surrounding the gate temporary layer, the substrate having two doping regions on two sides of the gate temporary layer respectively;
forming an insulating layer on the gate temporary layer, the spacer and the substrate forming a dielectric layer on the insulating layer;
removing the partial dielectric layer to expose the insulating layer;
removing the gate temporary layer and the insulating layer positioned on the gate temporary layer, and forming a bevel edge and a recess, the bevel edge covering the spacer, and the recess being surrounded by the spacer;
forming a barrier layer covering the inner sidewall of the recess, the bevel edge and the remaining dielectric layer;
forming a conductive layer in the recess, and on the bevel edge and the remaining dielectric layer; and
removing the barrier layer and the conductive layer positioned on the remaining dielectric layer to form a metal gate.
2. The method of claim 1 , wherein the step of removing the partial dielectric layer to expose the insulating layer utilizes either a chemical mechanical polishing process, an etching process, or a combination of the chemical mechanical polishing process and etching process.
3. The method of claim 1 , wherein the insulating layer and the dielectric layer, and the gate temporary layer and the spacer have high etching selectivity.
4. The method of claim 1 , wherein the step of forming the bevel edge is an ion bombard process, and the step of forming the recess is a dry etching process, and the two steps are performed at the same time.
5. The method of claim 1 , wherein the steps of forming the bevel edge and forming the recess are processed in the same instrument.
6. The method of claim 1 , wherein the recess is formed after the step of forming the bevel edge.
7. The method of claim 6 , wherein the step of forming the bevel edge utilizes either a dry etching process or a wet etching process.
8. The method of claim 6 , wherein the step of forming the recess utilizes either a dry etching process or a wet etching process.
9. The method of claim 1 , wherein the bevel edge is formed after the step of forming the recess.
10. The method of claim 9 , wherein the step of forming the recess utilizes either a dry etching process or a wet etching process.
11. The method of claim 9 , wherein the step of forming the bevel edge is an ion bombard process.
12. The method of claim 1 , wherein the insulating layer comprises a silicon nitride layer, the dielectric layer comprises an oxide layer, and the gate temporary layer comprises poly-silicon.
13. The method of claim 1 , wherein the insulating layer comprises a carbon or fluorine incorporated silicon-containing layer.
14. The method of claim 1 , further comprising:
forming a high k material layer in the inner sidewall of the recess, on the bevel edge, and the remaining dielectric layer prior to the barrier layer formation.
15. The method of claim 1 , further comprising:
forming a work function adjusting layer on the barrier layer after the barrier layer is formed.
16. The method of claim 1 , wherein the step of removing the barrier layer and the conductive layer on the remaining dielectric layer utilizes a chemical mechanical polishing process.