Curing layers of a semiconductor product using electromagnetic fields
A semiconductor product including a substrate, a semiconductor chip fitted to the substrate, and a layer, which contains coated particles, located adjacent to the semiconductor chip, wherein the coated particles have a ferromagnetic, ferrimagnetic or paramagnetic core and a coating.
1. A semiconductor product, comprising:
a substrate;
a semiconductor chip fitted to the substrate; and
a layer, which contains coated particles, located adjacent to the semiconductor chip,
wherein the coated particles have a ferromagnetic, ferrimagnetic or paramagnetic core and a coating.
2. The semiconductor product as claimed in claim 1 , wherein the layer contains an enveloping layer for encapsulating the semiconductor chip.
3. A semiconductor product, comprising:
a substrate;
a semiconductor chip fitted to the substrate; and
an encapsulation layer, which is located adjacent to the semiconductor chip, configured to encapsulate the semiconductor chip,
wherein the encapsulation layer contains coated particles having a ferromagnetic, ferrimagnetic or paramagnetic core and a coating.
4. The semiconductor product as claimed in claim 1 , wherein the layer is a polymer layer.
5. The semiconductor product as claimed in claim 1 , wherein a characteristic of the layer is matched by the coating being at least one characteristic from the group consisting of electrical conductivity, thermal conductivity and thermal coefficients of expansion.
6. The semiconductor product as claimed in claim 1 , wherein the coating is composed of material selected from the group consisting of Au, Ag, Cu, Ni and Al.
7. The semiconductor product as claimed in claim 1 , wherein the coating is a ceramic or a polymer material.
8. The semiconductor product as claimed in claim 1 , wherein the layer forms a chip adhesive or an enveloping material for a semiconductor chip.
9. The semiconductor product as claimed in claim 1 , wherein the layer is electrically conductive.
10. The semiconductor product as claimed in claim 5 , wherein the layer is anisotropically electrically conductive.
11. The semiconductor product as claimed in claim 1 , wherein the mean diameter of the particles is in a range from 2 nm to 120 μm.
12. The semiconductor product as claimed in claim 1 , further comprising a filler configured to match the thermal expansion of the layer to the thermal expansion of the semiconductor chip.
13. The semiconductor product as claimed in claim 1 , further comprising:
a further semiconductor chip in order to form a stack composed of at least two semiconductor chips; and
a further layer, which is cured by thermal radiation, being provided adjacent to the further semiconductor chip.
14. The semiconductor product as claimed in claim 1 , further comprising:
a further semiconductor chip; and
a further layer adjacent to the further semiconductor chip,
wherein the semiconductor chip and the further semiconductor chip are mounted on the substrate by means of the layer or the further layer, the layer is conductive, and the further layer is non-conductive.
15. The semiconductor product as claimed in claim 1 , wherein the substrate is a smart card substrate, and the semiconductor chip is mounted on the smart card substrate by means of the layer.
16. The semiconductor product as claimed in claim 1 , wherein the semiconductor chip is a power semiconductor chip.
17. A semiconductor product, comprising:
a substrate;
a semiconductor chip; and
a curable layer means, which contains coated particles, for mounting the semiconductor chip on the substrate,
wherein the coated particles have a ferromagnetic, ferrimagnetic or paramagnetic core and a coating.