Structure of metal interconnect and fabrication method thereof
View Patent ↗A process and structure for a metal interconnect includes providing a substrate with a first electric conductor, forming a first dielectric layer and a first patterned hard mask, using the first patterned hard mask to form a first opening and a second electric conductor, forming a second dielectric layer and a second patterned hard mask, using the second patterned hard mask as an etching mask and using a first patterned hard mask as an etch stop layer to form a second opening and a third electric conductor.
1. A metal interconnect structure, the metal interconnect structure being positioned on a substrate, and at least a first electric conductor being positioned on the substrate, the metal interconnect structure comprising:
a first dielectric layer positioned on the substrate and covering the first electric conductor;
a first patterned hard mask positioned on the first dielectric layer;
a second electric conductor positioned in the first patterned hard mask and the first dielectric layer and electrically connected with the first electric conductor;
a second dielectric layer positioned on the first patterned hard mask and the second electric conductor; and
a third electric conductor positioned in the second dielectric layer and partially covering the first patterned hard mask and electrically connected with the second electric conductor.
2. The metal interconnect structure of claim 1 , wherein the first electric conductor includes a gate, a source, a drain, or a doped region.
3. The metal interconnect structure of claim 2 , wherein the second electric conductor is a contact plug.
4. The metal interconnect structure of claim 3 , wherein a contact etch stop layer (CESL) is positioned between the substrate and the first dielectric layer and covers the first electric conductor.
5. The metal interconnect structure of claim 1 , wherein the first electric conductor surface contains a silicide layer.
6. The metal interconnect structure of claim 5 , wherein the patterned hard mask layer includes a chemical compound of silicon with carbon or nitrogen.
7. The metal interconnect structure of claim 1 , wherein the third electric conductor includes a via plug or a metal line.