Two-stage level shifting module
View Patent ↗For raising low voltage levels of a voltage range without over-broadening the voltage range, a first stage voltage level shifting circuit, which is capable of raising an upper bound of its input voltage range, is coupled to a second voltage level shifting circuit, which is capable of raising both an upper bound and a lower bound of its input voltage range. Therefore, a two-stage voltage level shifting module, which is generated by coupling the first voltage level shifting circuit to the second voltage level shifting circuit, is capable of providing appropriate voltages for external I/O devices having different biasing voltage ranges, where an upper bound and a lower bound of each of the provided biasing voltage ranges precisely indicates a digital logic 0 or a digital logic 1 indicated by a digital signal.
1. A two-stage voltage level shifting module for a plurality of I/O devices having different bias voltages, comprising:
a first stage voltage level shifting circuit;
a first voltage source coupled to a first voltage input terminal of the first stage voltage level shifting circuit;
a second voltage source having an voltage level higher than the voltage level of the first voltage source and being coupled to a second voltage input terminal of the first stage voltage level shifting circuit;
a third voltage source having an voltage level higher than the voltage levels of both the first voltage source and the second voltage source;
a first P-type MOSFET (metal-oxide-semiconductor field-effect transistor) having a source coupled to the third voltage source;
a second P-type MOSFET having a source coupled to the third voltage source, a drain coupled to a gate of the first P-type MOSFET, and a gate coupled to a drain of the first P-type MOSFET; and
a second stage voltage level shifting circuit comprising:
a third P-type MOSFET having a source coupled to the drain of the first P-type MOSFET;
a fourth P-type MOSFET having a source coupled to the drain of the second P-type MOSFET;
a fifth P-type MOSFET having a gate coupled to the drain of the third P-type MOSFET, a source coupled to the gate of the second P-type MOSFET, and a drain coupled to the first voltage source;
a sixth P-type MOSFET having a gate coupled to the drain of the fourth P-type MOSFET, a source coupled to the gate of the first P-type MOSFET, and a drain coupled to the first voltage source;
a first N-type MOSFET having a source coupled to the drain of the fifth P-type MOSFET, a gate coupled to a first signal output terminal of the first stage voltage level shifting circuit, and a drain coupled to the gate of the third P-type MOSFET;
a second N-type MOSFET having a source coupled to the drain of the sixth P-type MOSFET, a gate coupled to a second signal output terminal of the first stage voltage shifting circuit, and a drain coupled to the gate of the fourth P-type MOSFET;
a seventh P-type MOSFET having a gate coupled to the gate of the first N-type MOSFET, a drain coupled to the drain of the first N-type MOSFET, and a source coupled to the second voltage source; and
an eighth P-type MOSFET having a gate coupled to the second N-type MOSFET, a drain coupled to the drain of the second N-type MOSFET, and a source coupled to the second voltage source.
2. The two-stage level shifting module of claim 1 further comprising:
a third N-type MOSFET having a drain coupled to the drain of the third P-type MOSFET, and a gate coupled to the second voltage source; and
a fourth N-type MOSFET having a drain coupled to the drain of the fourth P-type MOSFET, and a gate coupled to the third N-type MOSFET.
3. The two-stage voltage level shifting module of claim 1 further comprising:
a third N-type MOSFET having a gate coupled to the drain of the second P-type MOSFET, a source coupled to the drain of the fifth P-type MOSFET, and a drain coupled to the gate of the second P-type MOSFET; and
a fourth N-type MOSFET having a gate coupled to the drain of the first P-type MOSFET, a source coupled to the drain of the sixth P-type MOSFET, and a drain coupled to the gate of the first P-type MOSFET.
4. The two-stage voltage level shifting module of claim 1 further comprising:
a third N-type MOSFET having a gate coupled to the second voltage source, and a drain coupled to the gate of the second P-type MOSFET;
a fourth N-type MOSFET having a drain coupled to the source of the third N-type MOSFET, a gate coupled to the second signal output terminal of the first stage voltage level shifting circuit, and a source coupled to the drain of the fifth P-type MOSFET;
a fifth N-type MOSFET having a drain coupled to the gate of the first P-type MOSFET, and a gate coupled to the second voltage source; and
an sixth N-type MOSFET having a drain coupled to the source of the fifth N-type MOSFET, a gate coupled to the first signal output terminal of the first stage voltage level shifting circuit, and a source coupled to the drain of the sixth P-type MOSFET.
5. The two-stage voltage level shifting module of claim 1 further comprising:
a third N-type MOSFET having a gate coupled to the drain of the second P-type MOSFET, a source coupled to the drain of the fifth P-type MOSFET, and a drain coupled to the gate of the second P-type MOSFET;
a fourth N-type MOSFET having a gate coupled to the drain of the first P-type MOSFET, a source coupled to the drain of the sixth P-type MOSFET, and a drain coupled to the gate of the first P-type MOSFET;
a fifth N-type MOSFET having a gate coupled to the second voltage source, and a drain coupled to the gate of the second P-type MOSFET;
an sixth N-type MOSFET having a drain coupled to the source of the seventh N-type MOSFET, a gate coupled to the second signal output terminal of the first stage voltage level shifting circuit, and a source coupled to the drain of the fifth P-type MOSFET;
a seventh N-type MOSFET having a drain coupled to the gate of the first P-type MOSFET, and a gate coupled to the second voltage source; and
an eighth N-type MOSFET having a drain coupled to the source of the seventh N-type MOSFET, a gate coupled to the first signal output terminal of the first stage voltage level shifting circuit, and a source coupled to the drain of the sixth P-type MOSFET.
6. The two-stage voltage level shifting module of claim 1 wherein the first stage voltage level shifting circuit comprises:
an invert logical operational amplifier having a first voltage input terminal coupled to the first voltage source, and a second voltage input terminal coupled to ground;
a third N-type MOSFET having a gate coupled to a signal output terminal of the invert logical operational amplifier, a source coupled to ground, and a drain coupled to the first signal output terminal of the first stage voltage level shifting circuit;
a fourth N-type MOSFET having a gate coupled to the signal input terminal of the invert logical operational amplifier, a source coupled to ground, and a drain coupled to the second signal output terminal of the first stage voltage level shifting circuit;
a seventh P-type MOSFET having a source coupled to the second voltage source, a gate coupled to the drain of the fourth N-type MOSFET, and a drain coupled to the drain of the third N-type MOSFET; and
an eighth P-type MOSFET having a source coupled to the second voltage source, a gate coupled to the drain of the third N-type MOSFET, and a drain coupled to the drain of the fourth N-type MOSFET.
7. The two-stage voltage level shifting module of claim 6 further comprising:
a fifth N-type MOSFET having a source coupled to the source of the third N-type MOSFET, and a gate coupled to the second signal output terminal of the first stage voltage level shifting circuit; and
an sixth N-type MOSFET having a source coupled to the source of the sixth N-type MOSFET, and a gate coupled to the first signal output terminal of the first stage voltage level shifting circuit.
8. The two-stage voltage level shifting module of claim 2 wherein the first stage voltage level shifting circuit comprises:
an invert logical operational amplifier having a first voltage input terminal coupled to the first voltage source, and a second voltage input terminal coupled to ground;
a fifth N-type MOSFET having a gate coupled to an output terminal of the invert logical operational amplifier, a source coupled to ground, and a drain coupled to the first signal output terminal of the first stage voltage level shifting circuit;
a sixth N-type MOSFET having a gate coupled to an input terminal of the invert logical operational amplifier, a source coupled to ground, and a drain coupled to the second signal output terminal of the first stage voltage level shifting circuit;
a seventh P-type MOSFET having a source coupled to the second voltage source, a gate coupled to the drain of the fifth N-type MOSFET, and a drain coupled to the drain of the sixth N-type MOSFET; and
an eighth p-type MOSFET having a source coupled to the second voltage source, a gate coupled to the drain of the fifth N-type MOSFET, and a drain coupled to the drain of the sixth N-type MOSFET.
9. The two-stage voltage level shifting module of claim 8 further comprising:
a seventh N-type MOSFET having a source coupled to the source of the fifth N-type MOSFET, a gate coupled to the second signal output terminal of the first stage voltage level shifting circuit, and a drain coupled to the source of the third N-type MOSFET; and
an eighth N-type MOSFET having a source coupled to the source of the sixth N-type MOSFET, a gate coupled to the first signal output terminal of the first stage voltage level shifting circuit, and a drain coupled to the source of the fourth N-type MOSFET.