Thin film transistors with poly(arylene ether) polymers as gate dielectrics and passivation layers

1. A gate dielectric layer or passivation layer in a thin film transistor wherein the layer comprises at least one polymer comprising repeat units of the following structure:

—(O—Ar 1 —O—Ar 2 ) m —(—O—Ar 3 —O—Ar 4 ) n —

where Ar 1 , Ar 2 , Ar 3 , and Ar 4 are identical or different aryl radicals, m is 0 to 1, n is 1-m, and at least one of the aryl radicals is grafted to at least one unsaturated or saturated group that is non-aromatic and is adapted to crosslink at a curing temperature below 250° C. without producing volatiles during curing and without providing functional groups after curing.

2. The gate dielectric or passivation layer of claim 1 capable of being cured at temperatures less than about 200° C.

3. The gate dielectric or passivation layer of claim 1 capable of being cured at about 180° C.

4. The gate dielectric or passivation layer of claim 1 capable of being cured by a method comprising exposing the layer to a source of radiation and heating to at temperature of less than about 180° C.

5. The gate dielectric or passivation layer of claim 4 wherein the exposing comprises exposing the layer to a source of radiation comprising at least one members elected from the group consisting of electron beam, photon, ultraviolet light, visible light, X-ray, thermal, and combinations thereof.

6. The gate dielectric or passivation layer of claim 5 , wherein the exposing comprising exposing the layer to ultraviolet or visible light.

7. A poly(arylene ether) polymer for use as a gate dielectric or passivation layer for a thin film transistor wherein the polymer comprises polymer repeat units of the following structure:

where G 1 , G 2 , G 3 , G 4 , G 5 , G 6 , G 7 and G 8 are identical or different and are H or aryl-containing groups:

8. The polymer of claim 7 wherein said polymer has a dielectric constant lower than about 3.0.

9. The polymer of claim 7 wherein said polymer has a dielectric constant higher than about 2.7.

10. The gate dielectric or passivation layer of claim 1 wherein the thin film transitor comprises:

at least one gate electrode;

the gate dielectric layer

at least one source electrode;

at least one drain electrode;

at least one semiconductor layer;

wherein the gate dielectric layer has a dielectric constant of greater than about 2.7.

11. The gate dielectric or passivation layer of claim 1 , wherein the poly(arylene ether) polymer is grafted.

12. The gate dielectric or passivation layer of claim 11 , wherein the poly(arylene ether) polymer is grafted to at least one unsaturated group.

13. The gate dielectric or passivation layer of claim 11 , wherein the poly(arylene ether) polymer is grafted to more than one unsaturated group.

14. The gate dielectric or passivation layer of claim 11 , wherein the poly(arylene ether) polymer is grafted with an aryl-containing graft.

15. The gate dielectric or passivation layer of claim 1 , wherein the poly(arylene ether) is not fluorinated.

16. The gate dielectric or passivation layer of claim 1 , wherein the polymer repeat units comprise poly(arylene ether) polymer repeat units having the following structure:

where G 1 , G 2 , G 3 , G 4 , G 5 , G 5 , G 7 and G 8 are identical or different species of the at least one unsaturated group.

17. The gate dielectric or passivation layer of claim 16 , wherein the poly(arylene ether) polymer contains an average number of unsaturated groups per polymer repeat unit of 0.1 to 4.

18. The gate dielectric or passivation layer of claim 16 , wherein the poly(arylene ether) polymer contains an average number of unsaturated groups per polymer repeat unit of 1 to 2.

19. The gate dielectric or passivation layer of claim 16 , wherein the poly(arylene ether) polymer comprises at least one unsaturated group comprising at least one member selected from the group consisting of an alkylene radical, an alkyldiene radical, an α-hydroxyalkylene radical and an α-hydroxyalkyldiene radical.

20. The poly(arylene ether) polymer of claim 7 wherein the poly(arylene ether) polymer comprises at least one unsaturated group comprising at least one member selected from the group consisting of:

21. The gate dielectric or passivation layer of claim 16 , wherein the poly(arylene ether) polymer contain the aryl radicals that are independently selected from the group consisting of:

22. The gate dielectric or passivation layer of claim 16 , wherein the poly(arylene ether) polymer contain the aryl radicals that are independently selected from the group consisting of:

23. The gate dielectric or passivation layer of claim 16 , wherein the poly(arylene ether) polymer comprises at least one of the aryl radical that is selected from the group consisting of 9,9-bis(4-hydroxyphenyl)-fluorene, 2,2-diphenylhexafluoropropene and 2,2-diphenylpropene.

24. The gate dielectric or passivation layer of claim 16 , wherein the poly(arylene ether) polymer contain the average number of unsaturated groups per polymer unit is more than 0.1 and not more than 1, and the poly(arylene ether) polymer comprises one of the following polymer repeat units:

25. The gate dielectric or passivation layer of claim 16 , wherein the poly(arylene ether) polymer contains at least one of the aryl radicals:

26. The gate dielectric or passivation layer of claim 1 , wherein the gate dielectric layer has a capacitance of greater than about 5 nF/cm 2 .

27. The gate dielectric or passivation layer of claim 16 , wherein the poly(arylene ether) polymer is present in cured form, said cured form of the polymer having a curing temperature from about 130 to about 180° C., a dielectric constant below about 3.0, and a maximum moisture absorption of less than about 0.2 wt %.

28. The gate dielectric or passivation layer of claim 1 wherein the thin film transitor comprises:

a substrate;

At least one gate electrode;

the gate dielectric layer;

At least one source electrode;

At least one drain electrode; and

At least one semiconductor layer in contact with the source and drain electrodes, wherein the gate dielectric layer has a dielectric constant of greater than about 2.7 and a capacitance of greater than about 5 nF/cm 2 .