Low-Impurity Organosilicon Product As Precursor For CVD

1 . An organosilicon composition comprising:

at least one organosilicon selected from the group consisting of: an alkoxysilane and a carboxysilane;

a first concentration of dissolved residual chloride; and

a first concentration of dissolved residual chloride scavenger,

wherein the organosilicon composition has a first K sp (os) defined as the product of [the first concentration of the dissolved residual chloride in parts per million by weight] X , wherein X is 1, 2, 3, or 4 and [the first concentration of the dissolved residual chloride scavenger in parts per million by weight],

wherein the first concentration of dissolved residual chloride is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4, and the first concentration of the dissolved residual chloride scavenger is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4.

2 . The composition of claim 1 wherein the at least one organosilicon comprises at least one carboxysilane.

3 . The composition of claim 1 wherein the at least one organosilicon comprises at least one alkoxysilane.

4 . The composition of claim 2 wherein the carboxysilane is at least one selected from the group consisting of:

a) a compound of the formula R 1 n (R 2 C(O)O) 3−n SiH, wherein R 1 is independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2 is independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; and n is 0, 1, or 2;

b) a compound of the formula R 1 n (R 2 C(O)O) 2−n HSi—O—SiHR 3 m (O(O)CR 4 ) 2−m , where R 1 and R 3 are independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2 and R 4 are independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; n is 0 or 1; and m is 0, 1 or 2;

c) a compound of the formula R 1 n (R 2 C(O)O) 2−n HSi—SiHR 3 m (O(O)CR 4 ) 2−m , where R 1 and R 3 are independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2 and R 4 are independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; n is 0 or 1; and m is 0, 1 or 2; and

d) a compound of the formula R 1 n (R 2 C(O)O) 2−n HSi—R 5 —SiHR 3 m (O(O)CR 4 ) 2−m where R 1 and R 3 are independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2 and R 4 are independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; R 5 is independently C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; n is 1 to 3; and m is 0, 1 or 2.

5 . The composition of claim 3 wherein the alkoxysilane is at least one selected from the group consisting of:

a) a compound of the formula R 1 n (R 2 O) 3−n SiH, where R 1 is independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2 is independently C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; and n is 0, 1, or 2;

b) a compound of the formula R 1 n (R 2 O) 2−n HSi—O—SiHR 3 m (OR 4 ) 2−m , where R 1 and R 3 are independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2 and R 4 are independently C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; n is 0 or 1; and m is 0, 1 or 2;

c) a compound of the formula R 1 n (R 2 O) 2−n HSi—SiHR 3 m (OR 4 ) 2−m , where R 1 and R 3 are independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated, R 2 and R 4 are independently C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; n is 0 or 1; and m is 0, 1 or 2; and

d) a compound of the formula R 1 n (R 2 O) 2−n HSi—R 5 —SiHR 3 m (OR 4 ) 2−m , where R 1 and R 3 are independently H, C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; R 2 and R 4 are independently C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated; R 5 is independently C 1 to C 10 , linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated; n is 0 or 1; m is 0, 1 or 2.

6 . The composition of claim 3 wherein the alkoxysilane is diethoxymethylsilane.

7 . The composition of claim 6 wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 90% of the square root of the first K sp (os) when X is 1, less than 90% of the cubed root of the first K sp (os) when X is 2, less than 90% of the fourth root of the first K sp (os) when X is 3, or less than 90% of the fifth root of the first K sp (os) when X is 4.

8 . (canceled)

9 . (canceled)

10 . (canceled)

11 . The composition of claim 6 wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 10% of the square root of the first K sp (os) when X is 1, less than 10% of the cubed root of the first K sp (os) when X is 2, less than 10% of the fourth root of the first K sp (os) when X is 3, or less than 10% of the fifth root of the first K sp (os) when X is 4.

12 . (canceled)

13 . (canceled)

14 . The composition of claim 6 wherein the first concentration of dissolved residual chloride is less than 2 ppm and the first concentration of dissolved residual chloride scavenger is less than 5 ppm.

15 . A method for preventing solids formation in an organosilicon material employed in a chemical vapor deposition process, the method comprising the steps of:

providing an organosilicon composition comprising:

at least one organosilicon selected from the group consisting of: an alkoxysilane and a carboxysilane;

a first concentration of dissolved residual chloride; and

a first concentration of dissolved residual chloride scavenger,

wherein the organosilicon composition has a first K sp (os) defined as the product of [the first concentration of the dissolved residual chloride in parts per million by weight] X , wherein X is 1, 2, 3, or 4 and [the first concentration of the dissolved residual chloride scavenger in parts per million by weight],

wherein the first concentration of dissolved residual chloride is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4, and the first concentration of the dissolved residual chloride scavenger is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4; and

providing a second organosilicon comprising at least one organosilicon selected from the group consisting of: an alkoxysilane and carboxysilane, a second concentration of dissolved residual chloride, and a second concentration of dissolved residual chloride scavenger,

wherein the second organosilicon has a second K sp (os) defined as the product of [the second concentration of the dissolved residual chloride in parts per million by weight] X , wherein X is 1, 2, 3, or 4, and [the second concentration of the dissolved residual chloride scavenger in parts per million by weight] and

wherein each of the second concentration of dissolved residual chloride and the second concentration of the dissolved residual chloride scavenger is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4.

16 . (canceled)

17 . The method of claim 15 wherein each of the first and second organosilicon comprises at least one alkoxysilane.

18 . The method of claim 17 wherein the alkoxysilane is diethoxymethylsilane.

19 . The method of claim 18 wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 90% of the square root of the first K sp (os) when X is 1, less than 90% of the cubed root of the first K sp (os) when X is 2, less than 90% of the fourth root of the first K sp (os) when X is 3, or less than 90% of the fifth root of the first K sp (os) when X is 4.

20 . The method of claim 19 wherein each of the second concentration of dissolved residual chloride and the second concentration of the dissolved residual chloride scavenger is less than 90% of the square root of the first K sp (os) when X is 1, less than 90% of the cubed root of the first K sp (os) when X is 2, less than 90% of the fourth root of the first K sp (os) when X is 3, or less than 90% of the fifth root of the first K sp (os) when X is 4.

21 . (canceled)

22 . (canceled)

23 . (canceled)

24 . (canceled)

25 . (canceled)

26 . (canceled)

27 . The method of claim 18 wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 10% of the square root of the first K sp (os) when X is 1, less than 10% of the cubed root of the first K sp (os) when X is 2, less than 10% of the fourth root of the first K sp (os) when X is 3, or less than 10% of the fifth root of the first K sp (os) when X is 4.

28 . The method of claim 27 wherein each of the second concentration of dissolved residual chloride and the second concentration of the dissolved residual chloride scavenger is less than 10% of the square root of the first K sp (os) when X is 1, less than 10% of the cubed root of the first K sp (os) when X is 2, less than 10% of the fourth root of the first K sp (os) when X is 3, or less than 10% of the fifth root of the first K sp (os) when X is 4.

29 . A method for purifying an organosilicon composition comprising at least one of an alkoxysilane and a carboxysilane; and dissolved residual chloride, the method comprising the steps of:

contacting the organosilicon composition with a stoichiometric excess of a basic chloride scavenger to cause at least a portion of the dissolved residual chloride to precipitate as a chloride salt;

removing the precipitated chloride salt from the organosilicon composition;

contacting the organosilicon composition with an acid gas to form a precipitate comprising a salt of the acid gas upon reaction with the excess basic chloride scavenger; and

removing the salt of the acid gas to form a purified organosilicon product.

30 . The method of claim 29 wherein the organosilicon comprises at least one carboxysilane.

31 . The method of claim 29 wherein the organosilicon comprises at least one alkoxysilane.

32 . The method of claim 31 wherein the alkoxysilane is diethoxymethylsilane.

33 . The method of claim 32 wherein the purified organosilicon product comprises a first concentration of dissolved residual chloride; and

a first concentration of dissolved residual chloride scavenger,

wherein the organosilicon has a first K sp (os) defined as the product of [the first concentration of the dissolved residual chloride in parts per million by weight] X , wherein X is 1, 2, 3, or 4 and [the first concentration of the dissolved residual chloride scavenger in parts per million by weight],

wherein the first concentration of dissolved residual chloride is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4, and the first concentration of the dissolved residual chloride scavenger is less than the square root of the first K sp (os) when X is 1, less than cubed root of the first K sp (os) when X is 2, less than the fourth root of the first K sp (os) when X is 3, or less than the fifth root of the first K sp (os) when X is 4.

34 . The method of claim 33 wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 90% of the square root of the first K sp (os) when X is 1, less than 90% of the cubed root of the first K sp (os) when X is 2, less than 90% of the fourth root of the first K sp (os) when X is 3, or less than 90% of the fifth root of the first K sp (os) when X is 4.

35 . (canceled)

36 . The method of claim 33 wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 50% of the square root of the first K sp (os) when X is 1, less than 50% of the cubed root of the first K sp (os) when X is 2, less than 50% of the fourth root of the first K sp (os) when X is 3, or less than 50% of the fifth root of the first K sp (os) when X is 4.

37 . (canceled)

38 . The method of claim 33 wherein each of the first concentration of dissolved residual chloride and the first concentration of the dissolved residual chloride scavenger is less than 10% of the square root of the first K sp (os) when X is 1, less than 10% of the cubed root of the first K sp (os) when X is 2, less than 10% of the fourth root of the first K sp (os) when X is 3, or less than 10% of the fifth root of the first K sp (os) when X is 4.

39 . (canceled)

40 . (canceled)

41 . The method of claim 33 wherein the first concentration of dissolved residual chloride is less than 2 ppm and the first concentration of dissolved residual chloride scavenger is less than 5 ppm.