Substrate processing method and substrate processing apparatus
View Patent ↗A substrate processing method according to the present invention is to be applied for stripping and removing, from the surface of a substrate, a resist no longer required. According to the substrate processing method, a resist stripping liquid is supplied to the center portion of the surface of a substrate held by a substrate holding unit. An organic solvent liquid is supplied to the peripheral edge portion of the surface of the substrate held by the substrate holding unit.
1. A substrate processing method to be applied for stripping and removing a resist no longer required from a surface of a substrate, comprising:
a substrate holding step of holding the substrate by a substrate holding unit;
a resist stripping liquid supplying step of supplying a resist stripping liquid to a center portion of the surface of the substrate held by the substrate holding unit;
an organic solvent supplying step of supplying an organic solvent liquid to a peripheral edge portion of the surface of the substrate held by the substrate holding unit; and
further comprising a protective fluid supplying step of supplying a protective fluid which protects the center portion from the organic solvent to the center portion of the surface of the substrate held by the substrate holding unit, simultaneously with the organic solvent supplying step.
2. A substrate processing method according to claim 1 , wherein the protective fluid is a stripping fluid capable of stripping and removing a resist at the center portion of the surface of the substrate.
3. A substrate processing method according to claim 2 , wherein the resist stripping liquid supplying step is executed simultaneously with the organic solvent supplying step, and the resist stripping liquid is used as the stripping fluid.
4. A substrate processing method according to claim 1 , wherein the protective fluid is a fluid having no ability to strip and remove a resist at the center portion of the surface of the substrate.