Flash memory device and program method
A method for programming a flash memory device includes selecting bit lines connected to a plurality of memory strings and selecting a word line. A lower bit is programmed into the memory cells connected to the selected word line and programming a upper bit into the memory cells. The step of selecting the word line and the step of programming the upper bit are repeated.
1. A flash memory device comprising:
a first memory group having a plurality of memory strings;
a second memory group having the same structure as that of the first memory group; and
a page buffer group having the same number of page buffers as the number of the memory strings of the first memory group or the number of memory strings of the second memory group, wherein one memory string of the first memory group and one memory string of the second memory group are oppositely connected to a corresponding page buffer of the page buffer group;
a plurality of first switching elements respectively connected to the plurality of memory strings in the first memory group, wherein the first switching elements are configured to supply a power supply voltage to the plurality of the memory strings in the first memory group according to a first signal;
a plurality of second switching elements connected between the page buffer group and the plurality of memory strings in the first memory group, wherein the second switching elements are configured to turned on or off in response to a second signal;
a plurality of third switching elements respectively connected to the plurality of memory strings in the second memory group, wherein the third switching elements are configured to supply the power supply voltage to the plurality of memory strings in the second memory group according to a third signal; and
a plurality of fourth switching elements connected between the page buffer group and the plurality of memory strings in the second memory group, wherein the fourth switching elements are configured to turned on or off in response to a fourth signal.
2. The flash memory device of claim 1 , wherein each of the first to fourth switching elements comprises an NMOS transistor.
3. A program method of a flash memory device, comprising the steps of:
providing a flash memory device including:
a first memory group having a plurality of memory strings,
a second memory group having the same structure as that of the first memory group,
a page buffer group having the same number of page buffers as the number of memory strings of the first memory group or the number of memory strings of the second memory group, wherein one memory string of the first memory group and one memory string of the second memory group are oppositely connected to a corresponding page buffer of the page buffer group,
a plurality of first switching elements respectively connected to the plurality of memory strings in the first memory group, wherein the first switching elements are configured to supply a power supply voltage to the plurality of the memory strings in the first memory group according to a first signal,
a plurality of second switching elements connected between the page buffer group and the plurality of memory strings in the first memory group, wherein the second switching elements are configured to turned on or off in response to a second signal,
a plurality of third switching elements respectively connected to the plurality of memory strings in the second memory group, wherein the third switching elements are configured to supply the power supply voltage to the plurality of memory strings in the second memory group according to a third signal, and
a plurality of fourth switching elements connected between the page buffer group and the plurality of memory strings in the second memory group, wherein the fourth switching elements are configured to turned on or off in response to a fourth signal;
selecting bit lines connected to the plurality of memory strings in the first memory group or the plurality of memory strings in the second memory group through the second and fourth switching elements;
selecting a word line of the first memory group or the second memory group; and
performing a programming operation.
4. The program method of the flash memory device of claim 1 , wherein the memory strings of the first memory group are each connected to an even bit line and the memory strings of the second memory group are each connected an odd bit line.
5. The program method of the flash memory device of claim 3 , wherein the programming operation comprises the steps of:
programming a lower bit of the selected word line; and
programming an upper bit of the selected word line.