Method for manufacturing cantilever structure of probe card
View Patent ↗A method for manufacturing a cantilever structure of a probe card is disclosed. In accordance with the method of the present invention, a first sacrificial wafer is used as a mold to form a cantilever structure having various shapes, a microscopic pitch and a high aspect ratio. In accordance with the method of the present invention, a probe tip may be formed by using a second sacrificial substrate and a bonding.
1. A method for manufacturing a cantilever structure, comprising steps of:
(a) forming a first mask layer pattern defining a probe beam region and a second mask layer pattern defining a bump on first and second surfaces of a first sacrificial substrate, respectively;
(b) etching the first sacrificial substrate exposed by the first mask layer pattern and the second mask layer pattern to form the probe beam region and the bump region mutually connected;
(c) removing the first mask layer pattern and the second mask layer pattern;
(d) bonding the first sacrificial substrate including the probe beam region and the bump region to an insulating substrate;
(e) forming a cantilever structure filling the probe beam region and the bump region; and
(f) removing the first sacrificial substrate.
2. The method in accordance with claim 1 , further comprising forming an oxide film on a surface of the first sacrificial substrate after carrying out the step (c).
3. The method in accordance with claim 1 , further comprising forming a first bonding layer between the first sacrificial substrate and the insulating substrate.
4. The method in accordance with claim 1 , further comprising forming a probe tip at an end portion of the cantilever structure.
5. The method in accordance with claim 4 , wherein the probe tip formation step comprises:
forming a third mask layer pattern exposing a probe tip region of the cantilever structure is formed;
forming the probe tip in the probe tip region; and
removing the third mask layer pattern.
6. The method in accordance with claim 4 , wherein the probe tip formation step comprises:
forming a fourth mask layer pattern exposing a portion of a second sacrificial substrate corresponding to a probe tip region of the cantilever structure is formed on the second sacrificial substrate;
etching the second sacrificial substrate using the fourth mask layer pattern as a mask to form the probe tip region;
forming the probe tip in the probe tip region;
forming a fifth mask layer pattern exposing the probe tip and an adjacent region;
forming a second bonding layer in a region exposed by the fifth mask layer pattern;
removing the fifth mask layer pattern;
bonding the second bonding layer to the probe tip region of the cantilever structure; and
removing the second sacrificial substrate.
7. The method in accordance with claim 1 , wherein each of the first mask layer pattern and the second mask layer pattern comprises a TEOS film.
8. The method in accordance with claim 1 , wherein the first bonding layer comprises a photoresist film.
9. The method in accordance with claim 1 , wherein the insulating substrate comprises one of a ceramic substrate, a glass substrate, an insulating silicon substrate and combinations thereof.
10. The method in accordance with claim 1 , wherein the step (e) comprises an electroplating process.