Method for producing Si
View Patent ↗A method for producing a microelectronic device comprising a plurality of Si 1-y Ge y based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents.
1. A method for producing a microelectronic device comprising a plurality of Si 1-y Ge y based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents, the method comprising:
a) forming, on a plurality of Si based semi-conductor zones and of different thicknesses that rest on a substrate, a Si 1-x Ge x based semi-conductor layer (wherein 0<x<1 and x<y), and
b) oxidizing the Si 1-x Ge x based semi-conductor layer.
2. The method of claim 1 , wherein the semi-conductor zones of different thicknesses are zones of a Si based layer in the form of a bevel.
3. The method of claim 1 , wherein the Si 1-x Ge x based semi-conductor layer (wherein 0<x<1 and x<y) is formed directly on each of the plurality of Si based semi-conductor zones.
4. The method of claim 1 , wherein the Si 1-x Ge x based semi-conductor layer (wherein 0<x<1 and x<y) formed on the plurality of Si based semi-conductor zones has a thickness in a range of from 40 to 100 nm.
5. A method for producing a microelectronic device comprising a plurality of Si 1-y Ge y based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents, the method comprising:
a) forming, on a plurality of Si based semi-conductor zones and of different thicknesses that rest on a substrate, a Si 1-x Ge x based semi-conductor layer (wherein 0<x<1 and x<y), and
b) oxidizing the Si 1-x Ge x based semi-conductor layer,
wherein the semi-conductor zones of different thicknesses are zones of a Si based layer in the form of a bevel, and
wherein the bevel form of the Si based layer has been formed prior to a) by:
forming a mask in the form of a bevel on the Si based layer,
oxidizing the Si layer through said mask in the form of a bevel, and
removing said mask in the form of a bevel.
6. The method of claim 5 , wherein the Si 1-x Ge x based semi-conductor layer (wherein 0<x<1 and x<y) formed on the plurality of Si based semi-conductor zones has a thickness in a range of from 40 to 100 nm.
7. A method for producing a microelectronic device comprising a plurality of Si 1-y Ge y based semi-conductor zones (wherein 0<y≦1) that have different respective Germanium contents, the method comprising:
a) forming, on a plurality of Si based semi-conductor zones and of different thicknesses that rest on a substrate, a Si 1-x Ge x based semi-conductor layer (wherein 0<x<1 and x<y), and
b) oxidizing the Si 1-x Ge x based semi-conductor layer,
wherein the semi-conductor zones of different thicknesses are zones of a Si based layer in the form of a bevel,
wherein the bevel form of the Si based layer has been formed prior to a) by:
forming a mask in the form of a bevel on the Si based layer,
oxidizing the Si layer through said mask in the form of a bevel, and
removing said mask in the form of a bevel, and
wherein the mask in the form of a bevel is based at least on an SiO 2 insulating material.
8. The method of claim 7 , wherein the Si 1-x Ge x based semi-conductor layer (wherein 0<x<1 and x<y) formed on the plurality of Si based semi-conductor zones has a thickness in a range of from 40 to 100 nm.