Semiconductor light-emitting diode
A semiconductor light-emitting diode includes an electrically conductive substrate transmissive to light-emitting wavelengths, and semiconductor layers including a light-emitting layer, on the substrate. A principal-surface electrode is located on the semiconductor layers and a rear-surface electrode having an opening is located on the rear surface of the substrate. The width of the opening is L, the distance between the rear-surface electrode and the light-emitting layer is t, L≦2 t, and the rear-surface electrode covers no more than 40% of the rear surface of the substrate.
1. A semiconductor light-emitting diode comprising:
an electrically conductive substrate that is transmissive to light at wavelengths emitted by the light-emitting diode and that has front and rear surfaces,
a plurality of semiconductor layers, including a light-emitting layer, on the front surface of said substrate;
a principal-surface electrode on said semiconductor layers with said semiconductor layers sandwiched between said substrate and said principal-surface electrode; and
a rear-surface electrode having an area and an opening, on the rear surface of said substrate, wherein
said opening has a width L,
distance between said rear-surface electrode and said light-emitting layer is t,
L ≦2 t, and
said rear-surface electrode covers no more than 40% of the rear surface of said substrate.
2. The semiconductor light-emitting diode according to claim 1 , wherein said rear-surface electrode covers no more than 25% of the rear surface of said substrate.
3. The semiconductor light-emitting diode according to claim 1 , wherein said rear-surface electrode covers no more than 15% of the rear surface of said substrate.
4. A semiconductor light-emitting diode comprising:
an electrically conductive substrate that is transmissive to light at wavelengths emitted by the light-emitting diode and that has front and rear surfaces,
a plurality of semiconductor layers including a light-emitting layer, on the front surface of said substrate;
a principal-surface electrode on said semiconductor layers with said semiconductor layers sandwiched between said substrate and said principal-surface electrode;
a rear-surface electrode having an area and an opening, on the rear surface of said substrate;
an insulating film on the rear surface of said substrate; and
an electrode pad on said insulating film and connected to said rear-surface electrode, wherein
said opening has a width L,
distance between said rear-surface electrode and said light-emitting layer is t,
L ≦2 t, and
said rear-surface electrode covers a region, excluding said insulating film, of no more than 40% of the rear surface of said substrate, excluding said insulating film.
5. The semiconductor light-emitting diode according to claim 4 , wherein said rear-surface electrode covers a region, excluding said insulating film, of no more than 25% of the rear surface of said substrate, excluding said insulating film.
6. The semiconductor light-emitting diode according to claim 4 , wherein said rear-surface electrode covers a region excluding said insulating film, of no more than 15% of the rear surface of said substrate, excluding said insulating film.
7. The semiconductor light-emitting diode according to claim 1 , wherein L ≦1.5 t.
8. The semiconductor light-emitting diode according to claim 4 , wherein L ≦1.5 t.
9. The semiconductor light-emitting diode according to claim 1 , wherein L ≦1.0 t.
10. The semiconductor light-emitting diode according to claim 4 , wherein L ≦1.0 t.
11. A semiconductor light-emitting diode comprising:
an electrically conductive substrate that is transmissive to light at wavelengths emitted by the light-emitting diode and that has front and rear surfaces,
a plurality of semiconductor layers including a light-emitting layer, on the front surface of said substrate;
a principal-surface electrode on said semiconductor layers with said semiconductor layers sandwiched between said substrate and said principal-surface electrode; and
a plurality of rear-surface electrodes on the rear surface of said substrate, wherein
distance between adjoining rear-surface electrodes is L,
distance between said plurality of rear-surface electrodes and said light-emitting layer is t,
L ≦2 t, and
said plurality of rear-surface electrodes covers no more than 40% of the rear surface of said substrate.
12. The semiconductor light-emitting diode according to claim 1 , wherein said rear-surface electrode has a comb shape.
13. The semiconductor light-emitting diode according to claim 4 , wherein said rear-surface electrode has a comb shape.
14. The semiconductor light-emitting diode according to claim 11 , wherein said plurality of rear-surface electrodes have a comb shape.
15. The semiconductor light-emitting diode according to claim 1 , wherein said rear-surface electrode has a net shape.
16. The semiconductor light-emitting diode according to claim 4 , wherein said rear-surface electrode has a net shape.
17. The semiconductor light-emitting diode according to claim 11 , wherein said plurality of rear-surface electrodes have a net shape.
18. The semiconductor light-emitting diode according to claim 1 wherein said principal-surface electrode and said rear-surface electrode sandwich said substrate and said plurality of semiconductor layers.
19. The semiconductor light-emitting diode according to claim 4 wherein said principal-surface electrode and said rear-surface electrode sandwich said substrate and said plurality of semiconductor layers.
20. The semiconductor light-emitting diode according to claim 11 wherein said principal-surface electrode and plurality of rear-surface electrode sandwich said substrate and said plurality of semiconductor layers.