Method of forming metal oxide

1. A method of forming a metal oxide comprising:

i) supplying a source gas including a metal precursor to allow the source gas to flow along a surface of a substrate so that a metal precursor layer is formed on the substrate;

ii) supplying an oxygen gas onto the substrate to form an oxygen atmosphere on the substrate;

iii) supplying an oxidizing gas including ozone to allow the oxidizing gas to flow along a surface of the metal precursor layer to oxidize the metal precursor layer so that metal oxide is formed on the substrate; and

iv) applying a radio frequency power to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas.

2. The method of claim 1 , wherein the metal precursor comprises at least one selected from the group consisting of zirconium (Zr), hafnium (Hf), aluminum (Al), tantalum (Ta), titanium (Ti), lanthanum (La), strontium (Sr), barium (Ba), praseodymium (Pr) and lead (Pb).

3. The method of claim 1 , wherein a concentration of the ozone in the oxidizing gas is in a range of about 100 g/m 3 to about 1000 g/m 3 .

4. The method of claim 1 , wherein the radio frequency power is applied substantially simultaneously with the supply of the oxidizing gas.

5. The method of claim 1 , wherein the oxygen gas is supplied for about 0.1 to about 3 seconds.

6. The method of claim 1 , further comprising:

purging an interior of a process chamber in which the substrate is placed after forming the metal precursor layer; and

purging the interior of the process chamber after forming the metal oxide.

7. The method of claim 1 , wherein the source gas and the oxidizing gas flow from a first edge portion of the substrate towards a second edge portion opposite to the first edge portion of the substrate.

8. The method of claim 1 , wherein an interior of a process chamber in which the substrate is placed is maintained at a pressure in a range of about 0.1 to about 10 Torr, and the substrate is maintained at a temperature in a range of room temperature to about 450° C.

9. The method of claim 1 , further comprising:

v) rotating the substrate by a predetermined angle; and

vi) repeatedly performing i) through iv).

10. The method of claim 1 , further comprising:

v) repeatedly performing i) through iv) while continuously rotating the substrate.