IP Library › Granted Patent US 7,935,995
Granted Patent B2
US 7,935,995 · App. 11/776,289 · Granted May 3, 2011

Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus

Assignee: Canon Kabushiki Kaisha
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Quick Facts
Patent No.
US 7,935,995
App. No.
11/776,289
Granted
May 3, 2011
Kind
B2
Abstract

A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor.

Claims (28)

1. A photoelectric conversion apparatus comprising:

a plurality of photoelectric conversion elements configured to convert incident light to electric carriers;

an amplifier MOS transistor shared by the plurality of photoelectric conversion elements;

a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor;

a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions; and

a plurality of wiring lines,

wherein at least two individual ones of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor,

wherein a part of the plurality of wiring lines define an aperture of one of the plurality of photoelectric conversion elements, and

wherein another part of said part of the plurality of wiring lines and a dummy wiring line define an aperture of a different photoelectric conversion element from the one of the plurality of photoelectric conversion elements.

2. The photoelectric conversion apparatus according to claim 1 , wherein the electric carriers are transferred from the plurality of photoelectric conversion elements to one of the floating diffusions.

3. The photoelectric conversion apparatus according to claim 1 , further comprising an output signal line through which signals from the amplifier MOS transistor are output, wherein the plurality of floating diffusions, which are electrically connected, are arranged parallel to a direction in which the output signal line extends.

4. The photoelectric conversion apparatus according to claim 3 , wherein the wiring line does not overlap the output signal line.

5. The photoelectric conversion apparatus according to claim 1 , wherein the floating diffusions and the wiring line are connected with a shared contact.

6. The photoelectric conversion apparatus according to claim 1 , wherein the floating diffusions are connected directly to the wiring line.

7. The photoelectric conversion apparatus according to claim 1 , wherein the dummy wiring line is electrically connected to one wiring line among the plurality of wiring lines and is formed by an extension of a part of the one wiring line among the plurality of wiring lines.

8. The photoelectric conversion apparatus according to claim 1 , the dummy wiring line is disposed apart from the plurality of wiring lines and is supplied with a ground potential, a power source potential or a fixed potential.

9. A photoelectric conversion apparatus, comprising:

a plurality of photoelectric conversion elements configured to convert incident light to electric carriers;

an amplifier MOS transistor shared by the plurality of photoelectric conversion elements;

a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor;

a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions; and

a plurality of wiring lines,

wherein at least two individual ones of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor,

wherein a part of the plurality of wiring lines define an aperture of one of the plurality of photoelectric conversion elements,

wherein another part of said part of the plurality of wiring lines and a dummy wiring line define an aperture of a different photoelectric conversion element from the one of the plurality of photoelectric conversion elements, and

wherein the photoelectric conversion apparatus is incorporated in an image pickup system that includes:

an optical system configured to form an image on the photoelectric conversion apparatus; and

a signal processing circuit configured to process output signals from the photoelectric conversion apparatus.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 28, 2012
From: NAKATA, YASUSHI
To: CANON KABUSHIKI KAISHA
Reel/Frame 028276/0590 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 31, 2007
From: WATANABE, TAKANORI; IWANE, MASAAKI; KURODA, YUKIHIRO; KOBAYASHI, MASAHIRO
To: CANON KABUSHIKI KAISHA
Reel/Frame 019622/0728 →
Priority Claims (1)
JP 2006-209757 · Aug 1, 2006 · national
Continuity (1)
Related Publication 20080029787A1 · Feb 7, 2008