Lithography aware leakage analysis

1. A method for performing leakage calculations, the method comprising:

receiving, at one or more computer systems, information specifying an integrated circuit;

determining, with one or more processors associated with the one or more computer systems, a neighborhood of shapes associated with the integrated circuit, wherein determining the neighborhood of shapes comprises:

determining a first set of spacings between a boundary of an internal shape of a first cell and a boundary of the first cell,

determining a second set of spacings between the boundary of the first cell and a boundary of a shape of a second cell, and

characterizing a lithography process using the first and second set of spacings; and

generating, with the one or more processors associated with the one or more computer systems, leakage information associated with the integrated circuit based on calculating leakage in the integrated circuit using a simulation of the characterized lithography process.

2. The method of claim 1 wherein characterizing the lithography process comprises characterizing effective transistor channel lengths as a function of the first and second set of spacings.

3. The method of claim 1 further comprising generating a mapping from the first and second set of spacings to the lithography process.

4. The method of claim 1 further comprising generating a mapping from the first and second set of spacings to leakage.

5. The method of claim 4 further comprising calculating leakage of the first cell based on the first and second set of spacing.

6. The method of claim 1 wherein the internal shape comprises a polysilicon transistor shape.

7. The method of claim 1 wherein the internal shape comprises a wiring shape.

8. A computer program product stored on a non-transitory computer readable medium for performing leakage calculations, the computer program product comprising:

code for receiving information specifying an integrated circuit;

code for determining a neighborhood of shapes associated with the integrated circuit, wherein the code for determining the neighborhood of shapes comprises:

code for determining a first set of spacings between a boundary of an internal shape of a first cell and a boundary of the first cell,

code for determining a second set of spacings between the boundary of the first cell and a boundary of a shape of a second cell, and

code for characterizing a lithography process using the first and second set of spacings; and

code for generating leakage information associated with the integrated circuit based on calculating leakage in the integrated circuit using a simulation of the characterized lithography process.

9. The computer program product of claim 8 wherein the code for characterizing the lithography process comprises code for characterizing effective transistor channel lengths as a function of the first and second set of spacings.

10. The computer program product of claim 8 further comprising code for generating a mapping from the first and second set of spacings to the lithography process.

11. The computer program product of claim 8 further comprising:

code for generating a mapping from the first and second set of spacings to leakage; and

code for calculating leakage of the first cell based on the first and second set of spacing.

12. The computer program product of claim 8 wherein the internal shape comprises a polysilicon transistor shape.

13. A system for performing leakage calculations, the system comprising:

a processor; and

a memory coupled to the processor, the memory configured to store a set of instructions which when executed by the processor cause the processor to:

receive information specifying an integrated circuit;

determine a neighborhood of shapes associated with the integrated circuit wherein determining the neighborhood of shapes comprises:

determining a first set of spacings between a boundary of an internal shape of a first cell and a boundary of the first cell,

determining a second set of spacings between the boundary of the first cell and a boundary of a shape of a second cell, and

characterizing a lithography process using the first and second set of spacings; and

generate leakage information associated with the integrated circuit based on calculating leakage in the integrated circuit using a simulation of the characterized lithography process.

14. The system of claim 13 wherein the processor is caused to characterize effective transistor channel lengths as a function of the first and second set of spacings to characterize the lithography process.

15. The system of claim 13 wherein the processor is further caused to generate a mapping from the first and second set of spacings to the lithography process.

16. The system of claim 13 wherein the processor is further caused to generate a mapping from the first and second set of spacings to leakage and calculate leakage of the first cell based on the first and second set of spacings.

17. The system of claim 13 wherein the internal shape comprises a polysilicon transistor shape.

18. A method for determining circuit performance, the method comprising:

receiving, at one or more computer systems, information specifying an integrated circuit;

determining, with one or more processors associated with the one or more computer systems, a neighborhood of shapes of a plurality of cells associated with the integrated circuit, wherein determining the neighborhood of shapes comprises:

determining a first set of spacings between a boundary of an internal shape associated with a first cell in the plurality of cells and a boundary of the first cell,

determining a second set of spacings between the boundary of the first cell and a boundary of a shape associated with a second cell in the plurality of cells, and

characterizing a lithography process using the first and second set of spacings;

generating a mapping between the first and second set of spacings and leakage;

calculating leakage of the first and second cells using a simulation of the characterized lithography process based on the first and second set of spacings;

generating a mapping from the first and second set of spacings to delay;

calculating delay of the first and second cells using a simulation of the characterized lithography process based on the first and second set of spacings; and

generating, with the one or more processors associated with the one or more computer systems, performance information associated with the integrated circuit based on electrical connections between the first cell and the second cell in response to the calculated delays and leakages of the first and second cells.

19. A computer program product stored on a non-transitory computer readable medium for determining circuit performance, the computer program product comprising:

code for receiving information specifying an integrated circuit;

code for determining a neighborhood of shapes of a plurality of cells associated with the integrated circuit, wherein determining the neighborhood of shapes comprises:

code for determining a first set of spacings between a boundary of an internal shape associated with a first cell in the plurality of cells and a boundary of the first cell,

code for determining a second set of spacings between the boundary of the first cell and a boundary of a shape associated with a second cell in the plurality of cells, and

code for characterizing a lithography process using the first and second set of spacings;

code for generating a mapping between the first and second set of spacings and leakage;

code for calculating leakage of the first and second cells using a simulation of the characterized lithography process based on the first and second set of spacings;

code for generating a mapping from the first and second set of spacings to delay;

code for calculating delay of the first and second cells using a simulation of the characterized lithography process based on the first and second set of spacings; and

code for generating performance information associated with the integrated circuit based on electrical connections between the first and second cells in response to the calculated delays and leakages of the first and second cells.