IP Library Granted Patent US 7,639,027
Granted Patent B2
US 7,639,027 · App. 11/785,644 · Granted Dec 29, 2009

Method of testing circuit elements on a semiconductor wafer

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Quick Facts
Patent No.
US 7,639,027
App. No.
11/785,644
Granted
Dec 29, 2009
Kind
B2
Abstract

A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105 . A plurality of electrodes 103 c are formed at the circuit board 103 at positions that face opposite a plurality of electrodes 201 a at a device to be measured 201 , whereas bumps 105 b are formed at the surface of the film 105 located toward the device to be measured 201 , at positions that face opposite the plurality of electrodes 201 a at the device to be measured 201 and electrodes 105 c are formed at the surface of the film 105 located toward the circuit board 103 at positions that face opposite the plurality of electrodes 103 c at the circuit board 103 . The bumps 105 b formed at one surface of the film 105 and the electrodes 105 c formed at another surface of the film 105 are electrically connected with each other via through holes 105 d to support semiconductor devices having electrodes provided at a fine pitch and to improve durability.

Claims (13)

1. A method of testing circuit elements on a semiconductor wafer, the method comprising:

providing said semiconductor wafer of which a wafer surface is coated with a resin,

wherein the wafer surface has a plurality of electrodes formed thereon and connected to the circuit elements, and

wherein the resin is to form an outer layer of packaged semiconductor devices formed by dividing the resin-coated semiconductor wafer, the resin leaving exposed the electrodes;

inserting the semiconductor wafer into a burn-in apparatus;

performing a burn-in process with the semiconductor wafer mounted in the burn-in apparatus on a circuit board via an elastic sheet; and

testing the circuit elements of the semiconductor wafer for electrical functions in the burn-in apparatus through the electrodes during the burn-in process.

2. The method of testing circuit elements on a semiconductor wafer according to claim 1 , wherein the semiconductor wafer is exposed to convective air in the burn-in apparatus.

3. The method of testing circuit elements on a semiconductor wafer according to claim 1 , wherein a pitch of the electrodes is equal to or less than 0.5 mm.

4. The method of testing circuit elements on a semiconductor wafer according to claim 1 , wherein the semiconductor wafer is mounted on the circuit board via a film.

5. The method of testing circuit elements on a semiconductor wafer according to claim 1 , wherein the semiconductor wafer and the circuit board are fixed by a positioning plate.

6. The method of testing circuit elements on a semiconductor wafer according to claim 1 , wherein the semiconductor wafer is fixed by a holding plate.

7. The method of testing circuit elements on a semiconductor wafer according to claim 6 , wherein the holding plate has a plurality of through holes.

Assignments (1)
CHANGE OF NAME Recorded Feb 26, 2009
From: OKI ELECTRIC INDUSTRY CO., LTD.
To: OKI SEMICONDUCTOR CO., LTD.
Reel/Frame 022343/0290 →