Measurement apparatus for FET characteristics
A measurement apparatus for FET characteristics comprises a divider connected to a pulse generator for dividing pulses from the pulse generator into first and second pulses; a first SMU; a first switch for selecting pulses from the divider or voltage from the first SMU; a terminal resistor for applying signals from the first switch and supplying the signals to the first terminal of the device under test; a second and a third SMU; a bias-T connected to the third SMU; a second switch for selecting to connect the second terminal of the device under test to the second SMU or to connect the second terminal to signals of the bias-T obtained by multiplexing the voltage from the third SMU; and voltage measurement unit connected to the divider and the bias-T.
1. A measurement apparatus for FET characteristics, comprising:
a pulse generator;
a divider connected to the pulse generator for dividing pulses from the pulse generator into first and second pulses;
a first SMU for supplying voltage;
a first switch connected from the divider and the first SMU for selecting pulses from the divider or voltage from the first SMU, and outputting signals;
a terminal resistor having one terminal connected to the first switch and a device under test and the other terminal connected to ground for applying signals from the first switch and supplying said signals to the first terminal of the device under test;
a second and a third SMU;
a bias-T connected to the third SMU for outputting signals obtained by multiplexing the voltage from the third SMU and signals that do not have a direct current component;
a second switch connected to the second terminal of the device under test, the second SMU and the bias-T for selecting to connect said second terminal to the second SMU or to connect said second terminal to signals of the bias-T obtained by multiplexing the voltage from the third SMU; and
voltage measurement unit connected to the divider and the bias-T for measuring the second pulse of the divider and the signals of the bias-T that do not have a direct current component, wherein
when the direct current characteristics of the device under test are measured, the first and second SMUs are connected to the device under test, and when the alternating current characteristics of the device under test are measured, the first and second switches are selected such that the pulse generator, the third SMU, and the voltage measurement unit are connected to the device under test.
2. The measurement apparatus for FET characteristics according to claim 1 , further comprising a controller.
3. The measurement apparatus for FET characteristics according to claim 2 , wherein said controller comprises a processor and a memory.
4. The measurement apparatus for FET characteristics according to claim 1 , wherein said first and second switches are RF switches.
5. The measurement apparatus for FET characteristics according to claim 1 , wherein said second SMU also measures current.
6. The measurement apparatus for FET characteristics according to claim 1 , wherein said voltage measurement unit is an oscilloscope.