Semiconductor device having symbol pattern utilized as identification sign
View Patent ↗A plurality of device patterns constituting part of an electronic circuit are formed over the surface of a substrate. A symbol pattern to be used for an identification sign is formed in the same layer as the device patterns. A width of the device pattern is within a pattern width range on a design rule. The symbol pattern is formed by a plurality of isolated element patterns. The element pattern is either a linear pattern or a dot pattern. A width of the element pattern is equal to or larger than 0.8 time a lower limit value of the pattern width range and equal to or smaller than 1.2 times an upper limit value of the pattern width range.
1. A semiconductor device comprising:
a plurality of device patterns constituting part of an electronic circuit formed over a surface of a substrate; and
a symbol pattern to be used for an identification sign formed in a same layer as the device patterns, the symbol pattern representing an original pattern corresponding to the identification sign;
wherein the original pattern contains a straight line portion; and
wherein a width of the device pattern is within a pattern width range on a design rule, the symbol pattern is formed by a plurality of isolated element patterns, each element pattern is a linear pattern, and a width of the element pattern is equal to or larger than 0.8 times a lower limit value of the pattern width range on the design rule and equal to or smaller than 1.2 times an upper limit value of the pattern width range on the design rule, the straight line portion of the original pattern is represented by at least two element patterns of the isolated element patterns, the two element patterns being disposed in parallel to each other.
2. The semiconductor device according to claim 1 , wherein a minimum interval between adjacent ones of the plurality of element patterns is equal to or larger than 0.8 times a minimum interval between adjacent ones of the plurality of device patterns.
3. The semiconductor device according to claim 1 , wherein the upper limit value of the pattern width range on the design rule is 1 μm or smaller.
4. The semiconductor device according to claim 1 , wherein the substrate is a wafer before separated into chips, a plurality of device regions partitioned by scribe lines are defined on a surface of the wafer, the device pattern is disposed in the device region, and the symbol pattern is disposed in the scribe line.
5. The semiconductor device according to claim 1 , wherein the original pattern contains a bending portion or a crossing portion, and the symbol pattern has a dot pattern disposed at a position corresponding to the bending portion or the crossing portion of the original pattern.
6. The semiconductor device according to claim 1 , wherein the device pattern and the element patterns of the symbol pattern comprises members filling recesses formed in a surface layer of the substrate.
7. A semiconductor device comprising:
a plurality of device patterns constituting part of an electronic circuit formed over a surface of a substrate; and
a symbol pattern to be used for an identification sign formed in a same layer as the device patterns, the symbol pattern representing an original pattern corresponding to the identification sign;
wherein the original pattern contains a bending portion or a crossing portion; and
wherein a width of the device pattern is within a pattern width range on a design rule, the symbol pattern is formed by a plurality of isolated element patterns, each element pattern is a linear pattern or a dot pattern, and a width of the element pattern is equal to or larger than 0.8 times a lower limit value of the pattern width range on the design rule and equal to or smaller than 1.2 times an upper limit value of the pattern width range on the design rule; and
wherein the original pattern corresponding to the identification sign is represented by a shape of a region where a plurality of element patterns constituting the symbol pattern are not disposed.