Semiconductor device and method of manufacturing the same
View Patent ↗A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film.
1. A semiconductor device comprising:
an insulating film;
an electro-conductive member provided in said insulating film;
a first electronic circuit component provided on a first surface side of said insulating film, and electrically connected to said electro-conductive member via a first solder;
a second electronic circuit component provided on a second surface side, which is opposite to said first surface side, of said insulating film, and electrically connected to said electro-conductive member via a second solder;
a first diffusion barrier metal film provided between said electro-conductive member and said first solder, and preventing diffusion of said first solder;
a second diffusion barrier metal film constituting at least a part of said electro-conductive member, and preventing diffusion of said second solder; and
an adhesive metal film provided on said first surface side of said insulating film and on said electro-conductive member as being brought into contact with said insulating film and said electro-conductive member, said adhesive metal film having stronger adhesiveness to said insulating film than adhesiveness of said first solder to said insulating film and adhesiveness of said first diffusion barrier metal film to said insulating film.
2. The semiconductor device as claimed in claim 1 ,
wherein said second diffusion barrier metal film is in contact with said adhesive metal film.
3. The semiconductor device as claimed in claim 1 ,
wherein said second solder is in contact with said electro-conductive member on said second surface of said insulating film.
4. The semiconductor device as claimed in claim 1 ,
wherein said adhesive metal film is a Ti film, TiN film, W film, TiW film, Cr film, Ta film or TaN film.
5. The semiconductor device as claimed in claim 1 ,
wherein each of said first and second diffusion barrier metal film is a Ni film or NiV film.
6. The semiconductor device as claimed in claim 1 , further comprising a first Au film provided on said first diffusion barrier metal film, as being brought into contact with said first solder.
7. The semiconductor device as claimed in claim 1 , further comprising a second Au film provided on said electro-conductive member, as being brought into contact with said second solder.
8. The semiconductor device as claimed in claim 1 , further comprising an interconnect provided on said first surface of said insulating film, and including a material composing said adhesive metal film.
9. The semiconductor device as claimed in claim 1 ,
wherein said insulating film has a thickness of 20 μm or smaller.