Nitride semiconductor light emitting diode

1 . A nitride semiconductor light emitting diode (LED) comprising:

an n-type clad layer;

an active layer formed on the n-type clad layer;

an electron blocking layer formed on the active layer, the electron blocking layer being composed of a p-type nitride semiconductor including a transition element of group III; and

a p-type clad layer formed on the electron blocking layer.

2 . The nitride semiconductor LED according to claim 1 ,

wherein the electron blocking layer is formed of p-type AlYGaN.

3 . A nitride semiconductor light emitting diode (LED) comprising:

a substrate;

an n-type clad layer formed on the substrate;

an active layer formed on a portion of the n-type clad layer;

an electron blocking layer formed on the active layer, the electron blocking layer being composed of a p-type nitride semiconductor including a transition element of group III;

a p-type clad layer formed on the electron blocking layer;

a p-electrode formed on the p-type clad layer; and

an n-electrode formed on the n-type clad layer where the active layer is not formed.

4 . The nitride semiconductor LED according to claim 3 ,

wherein the electron blocking layer is formed of p-type AlYGaN.

5 . A nitride semiconductor light emitting diode (LED) comprising:

a structure support layer;

a p-type electrode formed on the structure support layer;

a p-type clad layer formed on the p-type electrode;

an electron blocking layer formed on the p-type clad layer, the electron blocking layer being composed of a p-type nitride semiconductor including a transition element of group III;

an active layer formed on the electron blocking layer;

an n-type clad layer formed on the active layer; and

an n-electrode formed on the n-type clad layer.

6 . The nitride semiconductor LED according to claim 5 ,

wherein the electron blocking layer is formed of p-type AlYGaN.