Semiconductor device having a fuse element
A portion-to-be-melted of a fuse is surrounded by plates, so that heat to be generated in a meltdown portion of the fuse under current supply can be confined or accumulated in the vicinity of the meltdown portion of the fuse. This makes it possible to facilitate meltdown of the fuse. The meltdown portion of the fuse in a folded form, rather than in a single here a fuse composed of a straight-line form, is more successful in readily concentrating the heat generated in the fuse under current supply into the meltdown portion, and in further facilitating the meltdown of the fuse.
1. A semiconductor device, comprising:
a substrate;
an insulating layer formed on said substrate;
a fuse element having a first thickness and being brought into a blow state by a current supplied thereto and being embedded into said insulating layer; and
first and second conductive walls that are substantially perpendicular to said substrate and are embedded into said insulating layer to sandwich said fuse element therebetween with an intervention of a part of said insulating layer, each of said first and second conductive walls being formed with a second thickness that is larger than said first thickness,
wherein said insulating layer includes first and second insulating films, said fuse element being formed between said first and second insulating films, each of said first and second conductive walls including a first portion formed between said first and second insulating films,
wherein said first portion is composed of the same material as said fuse element and has a same thickness as said fuse element, and
wherein said first and second insulating films each extending in a single continuous plane between said first and second conductive walls.
2. The device as claimed in claim 1 , wherein each of said first and second conductive walls includes a second portion formed to penetrate said first insulating film in contact with said first portion.
3. The device as claimed in claim 1 , wherein each of said first and second conductive walls includes a second portion formed to penetrate said second insulating film in contact with said first portion.
4. The device as claimed in claim 1 , wherein each of said first and second conductive walls includes a second portion formed to penetrate said first insulating film in contact with said first portion and a third portion formed to penetrate said second insulating film in contact with said first portion.
5. A semiconductor device, comprising:
a substrate;
an insulating layer formed on said substrate;
a fuse element having a first thickness and being brought into a blow state by a current supplied thereto and being embedded into said insulating layer;
a first conductive plate formed on said insulating layer to cover said fuse element, and
first and second conductive walls that are substantially perpendicular to said substrate and are embedded into said insulating layer to sandwich said fuse element therebetween with an intervention of a part of said insulating layer, each of said first and second conductive walls being formed with a second thickness that is larger than said first thickness,
wherein said fuse element comprises first and second terminals between which said current flows and a body which is formed between said first and second terminals, and said first conductive plate covers entirely at least said body of said fuse element, and
wherein said body of said fuse element is narrower than said first and second terminals and is bent a plurality of times, and
wherein said insulating layer includes first and second insulating films, said fuse element being formed between said first and second insulating films, each of said first and second conductive walls including a first portion formed between said first and second insulating films, and
wherein said first portion is composed of the same material as said fuse element and has a same thickness as said fuse element.
6. The device as claimed in claim 5 , wherein each of said first and second conductive walls includes a second portion formed to penetrate said first insulating film in contact with said first portion.
7. The device as claimed in claim 5 , wherein each of said first and second conductive walls includes a second portion formed to penetrate said second insulating film in contact with said first portion.
8. The device as claimed in claim 5 , wherein each of said first and second conductive walls includes a second portion formed to penetrate said first insulating film in contact with said first portion and a third portion formed to penetrate said second insulating film in contact with said first portion.
9. The device as claimed in claim 5 , further comprising a second conductive plate embedded into said insulating layer between said fuse element and said substrate, said second conductive plate cooperating with said first conductive plate to sandwich said fuse element therebetween.
10. A method for manufacturing a semiconductor device, said device comprising:
a substrate;
an insulating layer formed on said substrate;
a fuse element having a first thickness and being brought into a blow state by a current supplied thereto and being embedded into said insulating layer; and
first and second conductive walls that are substantially perpendicular to said substrate and are embedded into said insulating layer to sandwich said fuse element therebetween with an intervention of a part of said insulating layer, each of said first and second conductive walls being formed with a second thickness that is larger than said first thickness,
wherein said insulating layer includes first and second insulating films, said fuse element being formed between said first and second insulating films, each of said first and second conductive walls including a first portion formed between said first and second insulating films, and
wherein said first portion is composed of the same material as said fuse element and has a same thickness as said fuse element, comprising:
forming said fuse element and a part of each of said first and second conductive walls at the same time,
wherein said first and second insulating films each extending in a single continuous plane between said first and second conductive walls.