Semiconductor package
A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.
1. A process for fabricating a semiconductor package comprising:
depositing a dielectric body directly over a portion of an interior surface of a conductive clip having at least one side rail;
forming at least one I/O lead over said dielectric body, said I/O lead including a conductive pad portion, an I/O terminal, and a track connecting said conductive pad to said I/O terminal;
connecting an electrode of an IC to said conductive pad portion;
electrically and mechanically connecting a power electrode of a power semiconductor device to said interior surface of said conductive clip wherein said I/O terminal is coplanar with said side rail.
2. The process of claim 1 , wherein said dielectric body is drop-on-demand deposited.
3. The process of claim 1 , wherein said I/O lead is drop-on-demand deposited.
4. The process of claim 1 , further comprising depositing a solder resist over at least a portion of said terminal.
5. The process of claim 4 , wherein said solder resist is drop-on-demand deposited.
6. The process of claim 1 , wherein said power semiconductor device is a power MOSFET.
7. The process of claim 1 , wherein said power semiconductor device is an IGBT.
8. The process of claim 1 , wherein said IC includes a driver circuit for driving said power semiconductor device.
9. The process of claim 1 , wherein said conductive clip is can-shaped.
10. The process of claim 1 , wherein said conductive clip is comprised of copper.
11. The process of claim 1 , wherein said conductive clip is plated with either gold or silver.
12. The process of claim 1 , wherein said dielectric body is comprised of a polymer.