Layered metal structure for interconnect element
View Patent ↗A layered metal structure is provided in accordance with an aspect of the invention. The structure can be used, for example, to fabricate a conductive interconnect element for conductively interconnecting one or more microelectronic elements. The layered structure includes first and second metal layers each of which may include one or more of copper or aluminum, for example. An intervening layer, may include for example, chromium between the first and second metal layers, chromium being resistant to an etchant usable to pattern the first and second metal layers selectively to the intervening layer. An etchant such as cupric chloride, ferric chloride (FeCl 3 ), a peroxysulfuric composition, or a persulfate composition may be used to pattern the first and second metal layers in such case.
1. An interconnect element for conductively interconnecting one or more microelectronic elements, comprising:
a dielectric layer;
a plurality of wiring patterns consisting essentially of copper and extending along a surface of said dielectric layer;
a plurality of conductive posts having first ends adjacent to said wiring patterns and second ends remote therefrom;
an etch stop layer consisting essentially of chromium or an alloy of chromium and nickel electrically connecting said first ends of said posts with said wiring patterns, said etch stop layer being resistant to an etchant usable to pattern each of first and second metal layers in accordance with first and second masks, respectively, to form said posts and said wiring patterns, respectively, wherein said etchant includes cupric chloride, wherein lengths of said posts between said first and second ends are much greater than a thickness of said etch stop layer between said posts and said wiring patterns.
2. The layered metal structure as claimed in claim 1 , wherein said etch stop layer consists essentially of chromium and said etch stop layer has a thickness of only about a few tens of angstroms.
3. The layered metal structure as claimed in claim 1 , wherein at least one of the plurality of wiring patterns or the plurality of posts includes electrodeposited copper.
4. The layered metal structure as claimed in claim 1 , wherein at least one of the plurality of wiring patterns or the plurality of posts includes rolled annealed copper.
5. An interconnection element as claimed in claim 1 , wherein said plurality of posts have lengths of at least 10 microns and said etch stop layer has a thickness smaller than 10 microns.
6. An interconnection element as claimed in claim 5 , wherein said thickness of said etch stop layer is about 1 micron.
7. An interconnect element for conductively interconnecting one or more microelectronic elements, comprising:
a dielectric layer;
a plurality of wiring patterns including copper and extending along a surface of said dielectric layer;
a plurality of conductive posts including copper having first ends adjacent to said wiring patterns and second ends remote therefrom;
an etch stop layer consisting essentially of chromium or an alloy of chromium and nickel electrically connecting said first ends of said posts with said wiring patterns, said etch stop layer being resistant to an etchant usable to pattern each of first and second metal layers in accordance with first and second masks, respectively, to form said posts and said wiring patterns, respectively, wherein said etchant includes at least one composition selected from the group consisting of ferric chloride (FeCl 3 ), a peroxysulfuric composition, and a persulfate composition, wherein lengths of said posts between said first and second ends are much greater than a thickness of said etch stop layer between said posts and said wiring patterns.
8. The layered metal structure as claimed in claim 7 , wherein said first and second metal layers are not attacked by an etchant which attacks said etch stop layer.
9. The layered metal structure as claimed in claim 7 , wherein said etch stop layer consists essentially of an alloy of chromium and nickel.
10. An interconnect element for conductively interconnecting one or more microelectronic elements, comprising:
a first metal layer consisting essentially of copper and having a thickness of at least 10 microns, said first metal layer including a plurality of posts each having a first end and extending in a first direction therefrom to a second end;
a dielectric layer extending in second and third directions transverse to said first direction;
a second metal layer consisting essentially of copper, said second metal layer including a plurality of wiring patterns extending in at least one of said second and third directions along a surface of said dielectric layer;
an etch stop layer consisting essentially of chromium or an alloy of chromium and nickel and having a thickness up to about one micron, said etch stop layer joining said first ends of said posts with said wiring patterns, said etch stop layer being resistant to an etchant usable to pattern each of said first and second metal layers in accordance with first and second masks, respectively, to form said posts and said wiring patterns, respectively, wherein said etchant includes cupric chloride.
11. An interconnect element for conductively interconnecting one or more microelectronic elements, comprising:
a first metal layer consisting essentially of copper and having a thickness of at least 10 microns, said first metal layer including a plurality of posts each having a first end and extending in a first direction therefrom to a second end;
a dielectric layer extending in second and third directions transverse to said first direction;
a second metal layer consisting essentially of copper, said second metal layer including a plurality of wiring patterns extending in at least one of said second and third directions along a surface of said dielectric layer;
an etch stop layer consisting essentially of chromium or an alloy of chromium and nickel and having a thickness up to about one micron, said etch stop layer joining said first ends of said posts with said wiring patterns, said etch stop layer being resistant to an etchant usable to pattern each of said first and second metal layers in accordance with first and second masks, respectively, to form said posts and said wiring patterns, respectively, wherein said etchant includes at least one composition selected from the group consisting of ferric chloride (FeCl 3 ), a peroxysulfuric composition, and a persulfate composition.