IP Library Granted Patent US 8,508,036
Granted Patent B2
US 8,508,036 · App. 11/803,006 · Granted Aug 13, 2013

Ultra-thin near-hermetic package based on rainier

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Quick Facts
Patent No.
US 8,508,036
App. No.
11/803,006
Granted
Aug 13, 2013
Kind
B2
Abstract

A microelectronic package including a dielectric layer having top and bottom surfaces, the dielectric layer having terminals exposed at the bottom surface; a metallic wall bonded to the dielectric layer and projecting upwardly from the top surface of the dielectric layer and surrounding a region of the top surface; a metallic lid bonded to the wall and extending over the region of the top surface so that the lid, the wall and the dielectric layer cooperatively define an enclosed space; and a microelectronic element disposed within the space and electrically connected to the terminals.

Claims (30)

1. A microelectronic package comprising:

(a) a polymeric dielectric layer having top and bottom surfaces, the dielectric layer having terminals exposed at the bottom surface;

(b) a metallic wall bonded to the dielectric layer and projecting upwardly from the top surface of the dielectric layer and surrounding a region of the top surface;

(c) a lid bonded to the wall and extending over the region of the top surface so that the lid, the wall and the dielectric layer cooperatively define an enclosed space; and

(d) a microelectronic element disposed within the space and electrically connected to the terminals, the microelectronic element having a front surface, a rear surface, and opposed edges extending between the front surface and the rear surface,

wherein the metallic wall surrounds the microelectronic element and a region of the top surface of the dielectric layer, and

wherein the top surface of the metallic wall extends beyond the opposed edges of the microelectronic element, and the bottom surface of the metallic wall extends beyond the opposed edges of the microelectronic element.

2. The package as claimed in claim 1 wherein the lid is metallic.

3. The package as claimed in claim 1 wherein the lid is metallurgically bonded to the wall.

4. The package as claimed in claim 1 wherein the dielectric layer includes a liquid crystal polymer.

5. The package as claimed in claim 4 wherein the dielectric layer is about 15-100 μm thick.

6. The package as claimed in claim 1 wherein the dielectric layer has holes extending through it and the terminals cover the holes.

7. The package as claimed in claim 6 wherein the terminals have dimensions larger than the holes.

8. The package as claimed in claim 6 wherein the terminals are disposed remote from the bottom surface of the dielectric layer and are exposed at the bottom surface through the holes.

9. The package as claimed in claim 1 further comprising metallic traces on the dielectric layer, the microelectronic element being electrically connected to the terminals through at least some of the traces.

10. The package as claimed in claim 9 wherein the wall, the terminals, and the traces are formed at least in part from portions of a common metallic layer.

11. A package substrate comprising:

(a) a polymeric dielectric layer having top and bottom surfaces, the dielectric layer having terminals exposed at the bottom surface; and

(b) a metallic wall having a top surface and a bottom surface, the metallic wall being bonded to the dielectric layer and projecting upwardly from the top surface of the dielectric layer and surrounding a region of the top surface of the dielectric layer thereby defining a partially enclosed space, configured to accommodate a microelectronic element having a front surface and a rear surface,

wherein the top surface of the metallic wall extends beyond the front surface of the microelectronic element, and the bottom surface of the metallic wall extends beyond the rear surface of the microelectronic element.

12. The microelectronic package of claim 1 wherein the dielectric layer is flexible.

13. The microelectronic package of claim 1 wherein said metallic wall and said lid are integrally formed.

14. A microelectronic package comprising:

(a) a dielectric layer having top and bottom surfaces, the dielectric layer having terminals exposed at the bottom surface;

(b) a continuous metallic wall bonded to the dielectric layer, the metallic wall having a top surface and a bottom surface and projecting upwardly from the top surface of the dielectric layer;

(c) a lid bonded to the wall and extending over the region of the top surface so that the lid, the wall and the dielectric layer cooperatively define an enclosed space; and

(d) a microelectronic element having a front surface and a rear surface, the microelectronic element disposed within the space and electrically connected to the terminals,

wherein the metallic wall surrounds the microelectronic element and a region of the top surface of the dielectric layer, and

wherein the top surface of the metallic wall extends beyond the front surface of the microelectronic element, and the bottom surface of the metallic wall extends beyond the rear surface of the microelectronic element.

15. The microelectronic package of claim 14 , wherein the metallic wall further comprises an edge extending between the top surface and the bottom surface, wherein the microelectronic element further comprises an edge extending between the front and rear surfaces, and wherein the edge of the metallic wall and the edge of the microelectronic element extend in a vertical direction transverse to a direction the terminals extend across the bottom surface of the dielectric layer.

Assignments (6)
CHANGE OF NAME Recorded Nov 21, 2025
From: TESSERA, INC.
To: TESSERA LLC
Reel/Frame 073657/0979 →
CHANGE OF NAME Recorded Nov 21, 2025
From: TESSERA LLC
To: ADEIA SEMICONDUCTOR SOLUTIONS LLC
Reel/Frame 073658/0661 →
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Jun 1, 2020
From: ROVI SOLUTIONS CORPORATION; ROVI TECHNOLOGIES CORPORATION; ROVI GUIDES, INC.; TIVO SOLUTIONS INC.; VEVEO, INC.; INVENSAS CORPORATION; INVENSAS BONDING TECHNOLOGIES, INC.; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: BANK OF AMERICA, N.A.
Reel/Frame 053468/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 9, 2008
From: HONER, KENNETH ALLEN; DAMBERG, PHILIP
To: TESSERA, INC.
Reel/Frame 020795/0635 →