Low dielectric constant materials prepared from soluble fullerene clusters
View Patent ↗This disclosure relates generally to polymeric networks of fullerene compounds, to methods of preparing precursors for such networks, and to their subsequent use as low dielectric constant materials in microelectronic devices.
1. A method for preparing a fullerene cluster, the method comprising: adding a branched coupling agent terminated by reactive groups at each chain end to three or more fullerenes, whereby the fullerenes are coupled together to form a fullerene cluster.
2. The method of claim 1 , wherein the three or more fullerenes comprise C 60 fullerenes.
3. The method of claim 1 , wherein the branched coupling agent comprises a primary or secondary amine.
4. The method of claim 1 , wherein the branched coupling agent is selected from the group consisting of: 3 aminopropyl-1,7-diaminoheptane, 4,4-di-4-aminobutyl-1,9-diaminononane, and 1,3,5-tri-4-aminobutylcyclohexane.
5. The method of claim 1 , wherein the fullerene cluster comprises between 4 and 12 fullerenes.
6. The method of claim 1 , wherein the branched coupling agent includes 3 to 20 carbon units per branch.
7. The method of claim 1 , wherein the branched coupling agent includes 3 to 7 carbon units per branch.
8. The method of claim 1 , wherein the branched coupling agent includes 3 or 4 carbon units per branch.
9. The method of claim 1 , wherein the branched coupling agent includes 10 to 20 carbon units per branch.
10. A method for preparing a fullerene polymer film, comprising:
preparing two or more fullerene clusters by adding a coupling agent to two or more fullerenes, whereby the fullerenes are coupled together to form a fullerene cluster;
derivatizing the fullerene clusters with at least one reactive aim to form derivatized fullerene clusters;
dissolving the derivatized fullerene clusters in a solvent to give a solution;
applying the solution onto a substrate; and
curing the derivatized fullerene clusters to form a fullerene polymer film.
11. The method of claim 10 , wherein the at least one reactive arm comprises:
a reactive group coupled to the fullerenes;
an organic spacer portion; and
a metal or metalloid alkoxide.
12. The method of claim 10 , wherein the fullerene clusters comprise C 60 fullerenes.
13. The method of claim 11 , wherein the at least one reactive arm comprises:
an amine, an azide, a diene or a carbanion;
an alkyl organic spacer portion; and
a metal or metalloid alkoxide selected from the group consisting of: —Si(OR) 3 , —Ge(OR) 3 , —Ti(OR) 3 , —Zr(OR) 3 , —Sn(OR) 3 , —Al(OR) 2 , and —B(OR) 2 .
14. The method of claim 11 , wherein the at least one reactive arm is selected from the group consisting of: 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 2-aminoethyl-3-aminopropyltrimethoxysilane, 2-aminoethyl-3-aminopropyltriethoxysilane, diethylenetriaminopropyltrimethoxysilane, hexane-diaminomethyltriethoxysilane, and 11-aminoundecyltriethoxysilane.
15. The method of claim 10 , wherein said applying comprises spin-coating, dip-coating or spray-coating the solution.
16. The method of claim 10 , wherein said curing comprises heating the derivatized fullerene clusters to between about 80° C. to 200° C. in a moist atmosphere.
17. A method for preparing a fullerene polymer film, the method comprising:
preparing two or more fullerene clusters by:
(i) providing two or more C 60 fullerenes; and
(ii) adding 1,6-diaminohexane to the fullerenes, whereby the fullerenes are coupled together to provide a fullerene cluster;
derivatizing the fullerene clusters with 6-aminohexyltriethoxysilane to give derivatized fullerene clusters;
dissolving the derivatized fullerene clusters in a solvent to give a solution;
applying the solution onto a substrate; and
curing the derivatized fullerene clusters to give a fullerene polymer film.
18. The method of claim 17 , wherein said applying comprises coating the solution onto a silicon wafer.
19. The method of claim 17 , wherein said curing comprises heating the derivatized fullerene clusters to greater than about 150° C.