Method for encapsulating a device in a microcavity
View Patent ↗Manufacturing a semiconductor device involves forming ( 200 ) a sacrificial layer where a micro cavity is to be located, forming ( 210 ) a metal layer of thickness greater than 1 micron over the sacrificial layer, forming ( 220 ) a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range 10 nm-500 nanometers. The pores can be created by anodising, electrodeposition or dealloying. Then the sacrificial layer can be removed ( 230 ) through the porous layer, to form the micro cavity, and pores can be sealed ( 240 ). Encapsulating MEMS devices with a porous layer can reduce costs by avoiding using photolithography for shaping the access holes since the sacrificial layer is removed through the porous membrane.
1. A method of manufacturing a semiconductor device having the steps of:
forming a sacrificial layer where a micro cavity is to be located;
forming a metal layer of thickness greater than 1 micron over the sacrificial layer;
forming a porous layer from the metal layer, the porous layer having pores of length greater than ten times their breadth, and having a breadth in the range of 10-500 nanometers;
wherein the metal layer comprises an alloy of metals having differing etch rates, and the step of forming the porous layer comprises etching the deposited alloy to remove the metal having the faster etch rate;
removing at least some of the sacrificial layer through the porous layer, to form the micro cavity; and
sealing the pores.
2. The method of claim 1 , the etching step comprising any one or more of: electrochemical etching and chemical etching using an oxidizer and chelator diluted in a supercritical fluid.
3. The method of claim 1 , the pores extending indirectly through the porous layer via junctions or curves.
4. The method of claim 1 , the step of sealing having the step of forming a sealing layer over the porous layer.
5. The method of claim 1 , to form a semiconductor device comprising any of a MEMS or NEMS device, a micro accelerometer, a micro gyroscope, micro tube, vibration micro sensor, micro mirror, micro mechanical resonator, resonant strain gauges, micro mechanical filter, micro switch, micro electrical circuit, micro relay, and an integrated circuit with air gap.