Memory cell with voltage modulated sidewall poly resistor

1 . A two terminal nonvolatile memory cell, comprising:

a first electrode;

a second electrode;

a charge storage medium; and

a resistive element;

wherein:

the charge storage medium and the resistive element are connected in parallel between the first and the second electrodes; and

a presence or absence of charge being stored in the charge storage medium affects a resistivity of the resistive element.

2 . The cell of claim 1 , further comprising a tunneling dielectric layer located between the first electrode and the charge storage medium, wherein the tunneling dielectric is sufficiently thin to allow charge carriers to tunnel between the first electrode and the charge storage medium through the tunneling dielectric.

3 . The cell of claim 2 , wherein the charge storage medium comprises a charge storage dielectric layer which is located between the tunneling dielectric layer and a blocking dielectric layer.

4 . The cell of claim 3 , wherein the tunneling dielectric comprises a silicon oxide layer, the charge storage dielectric layer comprises a silicon nitride layer and the blocking dielectric comprises a silicon oxide layer to form an ONO structure.

5 . The cell of claim 2 , wherein the charge storage medium comprises a semiconductor floating gate which is located between the tunneling dielectric layer and a blocking dielectric layer.

6 . The cell of claim 2 , wherein the resistive element comprises a semiconductor resistor.

7 . The cell of claim 2 , wherein the resistive element comprises a semiconductor diode.

8 . The cell of claim 2 , further comprising a separator dielectric layer which is located between the resistive element and the charge storage medium, wherein the separator dielectric is sufficiently thin to allow a presence or absence of charge being stored in the charge storage medium to affect the resistivity of the resistive element.

9 . The cell of claim 8 , wherein:

the first electrode is located over a substrate;

the tunneling dielectric is located on a first portion of the first electrode;

the charge storage medium comprises a pillar which is located on the tunneling dielectric;

the separator dielectric is located adjacent at least one sidewall of the pillar;

the resistive element is located adjacent to the separator dielectric and electrically contacts the second electrode and a second portion of the first electrode;

a blocking dielectric is located over the pillar; and

the second electrode is located over the blocking dielectric and over the pillar.

10 . The cell of claim 9 , wherein:

the separator dielectric surrounds the pillar; and

the resistive element surrounds the separator dielectric.

11 . The cell of claim 1 , wherein the cell comprises a readable, writable and erasable nonvolatile memory cell.

12 . A non-volatile memory cell array, comprising a plurality of the two terminal nonvolatile memory cells of claim 1 .

13 . A nonvolatile memory device, comprising:

a substrate;

a first electrode located over the substrate;

a tunneling dielectric located on a first portion of the first electrode;

a semiconductor pillar charge storage medium located on the tunneling dielectric;

a separator dielectric located adjacent at least one sidewall of the semiconductor pillar;

a semiconductor resistor located adjacent to the separator dielectric;

a blocking dielectric located over the semiconductor pillar; and

a second electrode located over the blocking dielectric and over the semiconductor pillar;

wherein the semiconductor resistor electrically contacts the second electrode and a second portion of the first electrode.

14 . The device of claim 13 , wherein the separator dielectric is sufficiently thin to allow a presence or absence of charge being stored in the semiconductor pillar to affect a resistivity of the semiconductor resistor.

15 . The device of claim 14 , wherein:

the separator dielectric surrounds the semiconductor pillar; and

the semiconductor resistor surrounds the separator dielectric.

16 . The device of claim 13 , wherein the device comprises a readable, writable and erasable nonvolatile memory device.

17 . A nonvolatile memory device, comprising:

a first electrode;

a second electrode;

a charge storage medium;

a tunneling dielectric located between the first electrode and the charge storage medium;

a resistive element; and

a control means for writing data by injecting charge from the first electrode into the charge storage medium through the tunneling dielectric, and for reading data by sensing a resistivity of the resistive element which varies based on a presence or absence of stored charge in the charge storage medium.

18 . The device of claim 17 , wherein the control means comprises at least one control circuit which is electrically connected to the first and the second electrodes.

19 . The device of claim 18 , wherein:

writing data comprises applying a write voltage having a first magnitude between the first electrode and the second electrode such that charge carriers are injected in a direction from the first electrode into the charge storage medium through the tunneling dielectric; and

reading data comprises applying a read voltage having a second magnitude less than the first magnitude between the first electrode and the second electrode and measuring a read current between the first and the second electrode through the resistive element which varies based on a presence or absence of charge being stored in the charge storage medium.

20 . The device of claim 19 , wherein the control means further comprises a means for erasing data by applying an erase voltage between the first electrode and the second electrode such that stored charge carriers are removed from the charge storage medium in a direction toward the first electrode by tunneling through the tunneling dielectric.