Semiconductor device and semiconductor device fabrication method
A semiconductor device includes: a semiconductor substrate; a first insulation film that is formed on the semiconductor substrate and includes grooves (including through holes); a metal film that is formed inside the grooves and includes a first metal (e.g., titanium (Ti)); a glue film formed on a side surface of the metal film; and a metal plating film that is formed on a side surface of the glue film, comprises a second metal (e.g., copper (Cu)), and includes a region having the first metal (e.g., Ti) in a surface that contacts the glue film. Thus, there are provided a semiconductor device and a semiconductor device fabrication method that have excellent adhesiveness and are capable of ensuring high reliability.
1 . A semiconductor device comprising:
a semiconductor substrate;
an insulation film that is formed on the semiconductor substrate and includes grooves;
a glue film formed inside the grooves; and
a metal plating film that is formed on a side surface of the glue film, includes a region having a first metal in a surface that contacts the glue film, and is formed by a second metal.
2 . The semiconductor device of claim 1 , further comprising a metal film that is formed between the insulation film and the glue film inside the grooves and includes the first metal.
3 . The semiconductor device of claim 1 , wherein the glue film includes the first metal.
4 . The semiconductor device of claim 1 , wherein the glue film is capable of preventing diffusion of the second metal via the glue film.
5 . The semiconductor device of claim 1 , wherein the glue film is a film comprising any one or more of ruthenium (Ru) and tungsten (W).
6 . The semiconductor device of claim 1 , wherein the first metal is configured by any one or more of lithium (Li), beryllium (Be), boron (B), magnesium (Mg), aluminium (Al), titanium (Ti), silicon (Si), scandium (Sc), vanadium (V), chromium (Cr), manganese (Mn), nickel (Ni), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), bromine (Br), rubidium (Rb), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), silver (Ag), indium (In), tin (Sn), antimony (Sb), tellurium (Te), barium (Ba), hafnium (Hf), rhenium (Re), gold (Au), iridium (Ir), platinum (Pt), and lead (Pb).
7 . The semiconductor device of claim 1 , wherein the second metal is copper (Cu).
8 . The semiconductor device of claim 1 , further comprising a diffusion barrier film that is a film formed between side surfaces of the grooves and the glue film and prevents the second metal from diffusing via the film.
9 . A semiconductor device fabrication method comprising:
forming an insulation film on a semiconductor substrate;
forming grooves in the insulation film;
forming a metal film including a first metal inside the grooves and on the insulation film;
forming a glue film on the metal film;
forming, on the glue film by an electrolytic plating method, a metal plating film that completely fills the grooves and comprises a second metal;
evenly polishing the metal plating film, the glue film and the metal film from above to expose an upper surface of the insulation film and form wires comprising the metal plating film, the glue film and the metal film inside the grooves; and
thermally processing the wires to cause the first metal to diffuse from the metal film to the metal plating film to form a region having the first metal in a surface of the metal plating film that contacts the glue film.
10 . The semiconductor device fabrication method of claim 9 , wherein the glue film is capable of preventing diffusion of the second metal via the glue film.
11 . The semiconductor device fabrication method of claim 9 , wherein the glue film is a film comprising any one or more of ruthenium (Ru) and tungsten (W).
12 . The semiconductor device fabrication method of claim 9 , wherein the first metal is configured by any one or more of lithium (Li), beryllium (Be), boron (B), magnesium (Mg), aluminium (Al), titanium (Ti), silicon (Si), scandium (Sc), vanadium (V), chromium (Cr), manganese (Mn), nickel (Ni), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), bromine (Br), rubidium (Rb), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), silver (Ag), indium (In), tin (Sn), antimony (Sb), tellurium (Te), barium (Ba), hafnium (Hf), rhenium (Re), gold (Au), iridium (Ir), platinum (Pt), and lead (Pb).
13 . The semiconductor device fabrication method of claim 9 , wherein the second metal is copper (Cu).
14 . The semiconductor device fabrication method of claim 9 , further comprising growing crystal grains of the second metal by thermally processing the metal plating film before forming the region having the first metal in the surface of the metal plating film that contacts the glue film.
15 . The semiconductor device fabrication method of claim 9 , further comprising forming, between side surfaces of the grooves and the glue film, a diffusion barrier film that prevents the second metal from diffusing via the film.
16 . A semiconductor device fabrication method comprising:
forming an insulation film on a semiconductor substrate;
forming grooves in the insulation film;
forming a glue film having a first metal inside the grooves and on the insulation film;
forming, on the glue film by an electrolytic plating method, a metal plating film that completely fills the grooves and comprises a second metal;
evenly polishing the metal plating film and the glue film from above to expose an upper surface of the insulation film and form wires comprising the metal plating film and the glue film inside the grooves; and
thermally processing the wires to cause the first metal to diffuse from the glue film to the metal plating film to form a region having the first metal in a surface of the metal plating film that contacts the glue film.
17 . The semiconductor device fabrication method of claim 16 , wherein the glue film is capable of preventing diffusion of the second metal via the glue film.
18 . The semiconductor device fabrication method of claim 16 , wherein the glue film is a film comprising any one or more of ruthenium (Ru) and tungsten (W).
19 . The semiconductor device fabrication method of claim 16 , wherein the first metal is configured by any one or more of lithium (Li), beryllium (Be), boron (B), magnesium (Mg), aluminium (Al), titanium (Ti), silicon (Si), scandium (Sc), vanadium (V), chromium (Cr), manganese (Mn), nickel (Ni), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), bromine (Br), rubidium (Rb), strontium (Sr), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), silver (Ag), indium (In), tin (Sn), antimony (Sb), tellurium (Te), barium (Ba), hafnium (Hf), rhenium (Re), gold (Au), iridium (Ir), platinum (Pt), and lead (Pb).
20 . The semiconductor device fabrication method of claim 16 , wherein the second metal is copper (Cu).
21 . The semiconductor device fabrication method of claim 16 , further comprising growing crystal grains of the second metal by thermally processing the metal plating film before forming the region having the first metal in the surface of the metal plating film that contacts the glue film.
22 . The semiconductor device fabrication method of claim 16 , further comprising forming, between side surfaces of the grooves and the glue film, a diffusion barrier film that prevents the second metal from diffusing via the film.