Top layers of metal for high performance IC's
View Patent ↗A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.
1. An integrated circuit chip comprising:
a silicon substrate;
multiple devices in and on said silicon substrate;
a first dielectric layer over said silicon substrate;
a first metallization structure over said first dielectric layer, wherein said first metallization structure is connected to said multiple devices, and wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer;
a second dielectric layer between said first and second metal layers;
a passivation layer over said first metallization structure and over said first and second dielectric layers, wherein said passivation layer comprises a topmost nitride layer of said integrated circuit chip and a topmost oxide layer of said integrated circuit chip; and
a second metallization structure over said passivation layer, wherein said second metallization structure comprises a ground plane and a signal line at a same horizontal level, wherein said signal line is separate from and enclosed by said ground plane.
2. The integrated circuit chip of claim 1 , wherein said first metallization structure comprises electroplated copper.
3. The integrated circuit chip of claim 1 , wherein said first metallization structure comprises aluminum.
4. The integrated circuit chip of claim 1 , wherein said second metallization structure comprises electroplated copper.
5. The integrated circuit chip of claim 1 , wherein said second metallization structure comprises an electroplated metal.
6. The integrated circuit chip of claim 1 , wherein said second metallization structure comprises aluminum.
7. The integrated circuit chip of claim 1 , wherein said second metallization structure comprises tungsten.
8. An integrated circuit chip comprising:
a silicon substrate;
multiple devices in and on said silicon substrate;
a first dielectric layer over said silicon substrate;
a first metallization structure over said first dielectric layer, wherein said first metallization structure is connected to said multiple devices, and wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer;
a second dielectric layer between said first and second metal layers;
a passivation layer over said first metallization structure and over said first and second dielectric layers, wherein said passivation layer comprises a topmost nitride layer of said integrated circuit chip and a topmost oxide layer of said integrated circuit chip; and
a second metallization structure over said passivation layer, wherein said second metallization structure comprises a ground metal and a signal line at a same horizontal level, wherein said ground metal is along both sides of said signal line and separate from said signal line.
9. The integrated circuit chip of claim 8 , wherein said first metallization structure comprises electroplated copper.
10. The integrated circuit chip of claim 8 , wherein said first metallization structure comprises aluminum.
11. The integrated circuit chip of claim 8 , wherein said second metallization structure comprises electroplated copper.
12. The integrated circuit chip of claim 8 , wherein said second metallization structure comprises an electroplated metal.
13. The integrated circuit chip of claim 8 , wherein said second metallization structure comprises aluminum.
14. The integrated circuit chip of claim 8 , wherein said second metallization structure comprises tungsten.
15. An integrated circuit chip comprising:
a silicon substrate;
multiple devices in and on said silicon substrate;
a first dielectric layer over said silicon substrate;
a first metallization structure over said first dielectric layer, wherein said first metallization structure is connected to said multiple devices, and wherein said first metallization structure comprises a first metal layer and a second metal layer over said first metal layer;
a second dielectric layer between said first and second metal layers;
a passivation layer over said first metallization structure and over said first and second dielectric layers, wherein said passivation layer comprises a topmost nitride layer of said integrated circuit chip and a topmost oxide layer of said integrated circuit chip; and
a second metallization structure over said passivation layer, wherein said second metallization structure comprises a ground plane and a contact point at a same horizontal level, wherein said contact point is separate from and enclosed by said ground plane, wherein said second metallization structure further comprises a signal interconnect passing vertically between layers through said contact point.
16. The integrated circuit chip of claim 15 , wherein said first metallization structure comprises electroplated copper.
17. The integrated circuit chip of claim 15 , wherein said first metallization structure comprises aluminum.
18. The integrated circuit chip of claim 15 , wherein said second metallization structure comprises electroplated copper.
19. The integrated circuit chip of claim 15 , wherein said second metallization structure comprises an electroplated metal.
20. The integrated circuit chip of claim 15 , wherein said second metallization structure comprises aluminum.
21. The integrated circuit chip of claim 15 , wherein said second metallization structure comprises tungsten.