SINTERED METAL COMPONENTS FOR CRYSTAL GROWTH REACTORS
An injector apparatus for a crystal growth reactor having a graphite casing, a stainless steel nozzle, a nozzle holder to position the nozzle within the graphite casing, a lower injector disposed within the graphite casing and extending around the nozzle to a point above the nozzle to direct gas flow from the nozzle, an upper injector comprising metal carbide disposed within the casing above the lower injector and spaced apart from the lower injector, and an upper injector.
1 . An injector apparatus for a crystal growth reactor comprising;
a sintered metal carbide upper injector; and
a lower injector with a gap between the upper and lower injectors.
2 . The injector apparatus of claim 1 wherein the metal carbide is niobium carbide.
3 . The injector apparatus of claim 1 wherein the metal carbide is tantalum carbide.
4 . The injector apparatus of claim 1 further comprising a graphite casing wherein the graphite casing surrounds at least a part of a section containing the lower injector and at least a part of a section containing the upper injector.
5 . The injector apparatus of claim 1 further comprising a stainless steel nozzle.
6 . The injector apparatus of claim 1 further comprising an upper injector sleeve to position the upper injector within the crucible.
7 . The injector apparatus of claim 1 further comprising an inner gas conduit and an outer gas conduit, both terminating in the lower injector.
8 . The injector apparatus of claim 1 wherein the lower injector is an inverted frustum of a conical shape.
9 . The injector apparatus of claim 1 wherein the lower injector is cylindrical.
10 . A crystal growth reactor comprising an injector apparatus according to claim 1 .
11 . The injector apparatus of claim 1 , wherein the body has a substantially tubular shape having an outer diameter of about 25-35 mm, an inner diameter of about 15-25 mm, and a length of about 70-105 mm.
12 . A method of growing a crystal comprising:
providing an injector apparatus according to claim 1 in an operative position within a reactor;
providing a seed crystal within the reactor;
introducing into the reactor through one or more injectors, a flow of one or more crystal precursor gases to cause crystal growth.
13 . A method of fabricating a semiconductor device comprising;
forming a semiconductor crystal according to claim 12;
forming a semiconductor device from the semiconductor crystal.
14 . An injector apparatus for a crystal growth reactor comprising:
a graphite casing comprising one or more components;
a stainless steel nozzle;
a nozzle holder to position the nozzle within the graphite casing;
a lower injector disposed within the graphite casing and extending around the nozzle to a point above the nozzle to direct gas flow from the nozzle;
an upper injector comprising metal carbide disposed within the casing above the lower injector and spaced apart from the lower injector;
an upper injector sleeve to position the upper injector within the crucible; and
wherein the graphite casing surrounds at least a part of a section containing the lower injectors and at least a part of a section containing the upper injector.
15 . The injector apparatus of claim 14 wherein the upper injector comprises niobium carbide.
16 . The injector apparatus of claim 14 wherein the upper injector comprises tantalum carbide.
17 . The injector apparatus of claim 14 wherein the lower injector has an inner gas conduit and an outer gas conduit terminating therein.
18 . A method of forming a crystal comprising:
providing an injector apparatus according to claim 17; and
introducing an inert gas with atomic weight greater than 28 into the outer gas conduit.
19 . The method of claim 18 further comprising introducing helium into the outer gas conduit.
20 . A crucible for use in a crystal growth reactor, comprising:
sintered metal carbide.
21 . The crucible of claim 20 wherein the sintered metal carbide is niobium carbide
22 . A crystal growth reactor having a crucible according to claim 20 .
23 . A crystal growth crucible liner comprising:
a plurality of metal carbide shells of substantially similar outer dimensions to inner dimensions of a crucible, such that the shells line the crucible.
24 . The crucible liner of claim 23 wherein the crucible is substantially cylindrical and the shells are ring-shaped.
25 . The crucible liner of claim 23 wherein the metal carbide is niobium carbide.
26 . The crucible liner of claim 23 wherein the metal carbide is tantalum carbide.
27 . The crucible liner of claim 23 wherein each shell has an outer diameter from about 70 to 120 mm, an inner diameter from about 50 to 100 mm, and a length from about 60 mm to 200 mm.
28 . A crystal growth reactor comprising:
a metal carbide crucible;
a seed holder comprising a washer disposed within a drool, a main body disposed over the washer and drool, forming an enclosure above the washer and drool, the enclosure forming a cavity above the washer and drool, one or more main body apertures in the main body for the introduction of gases into the cavity, wherein gases introduced into the cavity can seep through the an interface between the drool and the washer.
an injector apparatus comprising a casing, a nozzle, a nozzle holder to position the nozzle within the casing, a lower injector disposed within the casing and extending around the nozzle to a point above the nozzle to direct gas flow from the nozzle;
an upper injector comprising metal carbide disposed within the casing above the lower injector and spaced apart from the lower injector; and
an upper injector outer layer to inhibit gas entering span between the casing and upper injector.