Semiconductor device and method of manufacturing the same
A semiconductor device has a semiconductor substrate having an impurity-diffused region and a device isolation insulating film formed in the surficial portion thereof, a gate electrode formed on the semiconductor substrate, a contact formed on the gate electrode and connected to the gate electrode, and a protective film disposed between the semiconductor substrate and the gate electrode, below the connecting portion between the gate electrode and the contact, formed wider in width than the gate electrode in a sectional view taken along the direction of gate length of the gate electrode.
1. A semiconductor device having transistors formed therein, comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
an insulating interlayer formed on said gate electrode;
a contact formed of an electro-conductive material filling a contact hole in said insulating interlayer, a bottom of said contact reaching said gate electrode, said contact being connected with said gate electrode; and
a protective film partially surrounded by said insulating interlayer and disposed between said semiconductor substrate and said gate electrode and below the connecting portion between said gate electrode and said contact, said protective film formed wider in width than said gate electrode in a sectional view across a direction of gate length of said gate electrode.
2. The semiconductor device as claimed in claim 1 , further comprising:
an impurity-diffused region; and
an isolation region having a device isolation insulating film formed therein,
said impurity-diffused region and said isolation region formed in a surficial portion of said semiconductor substrate,
wherein said gate electrode comprises a first portion configured to function as a gate electrode of said transistor, and a second portion configured to function as a connecting portion to said contact, and
wherein said gate electrode extends unidirectionally with a constant width from said first portion to said second portion.
3. The semiconductor device as claimed in claim 2 ,
wherein said contact is formed on said isolation region, and
wherein said protective film is selectively formed on said isolation region, said protective film and said device isolation insulating film being composed of different materials.
4. The semiconductor device as claimed in claim 1 ,
wherein said contact is formed wider in width than said gate electrode in a sectional view along the direction of gate length, and
wherein said contact is in contact with said protective film beside said gate electrode.
5. The semiconductor device as claimed in claim 1 ,
wherein said protective film is composed of a silicon nitride film.
6. The semiconductor device as claimed in claim 1 , further comprising:
an impurity-diffused region; and
an isolation region having a device isolation insulating film formed therein,
said impurity-diffused region and said isolation region formed in a surficial portion of said semiconductor substrate,
wherein said protective film is configured to protect said device isolation insulating film when said contact hole is formed in said insulating interlayer.
7. A semiconductor device having transistors formed therein, comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
an insulating interlayer formed on said gate electrode;
a contact formed of an electro-conductive material filling a contact hole in said insulating interlayer a bottom of said contact reaching said gate electrode, said contact being connected with said gate electrode;
a protective film disposed between said semiconductor substrate and said gate electrode and below the connecting portion between said gate electrode and said contact, said protective film formed wider in width than said gate electrode in a sectional view across a direction of gate length of said gate electrode;
an impurity-diffused region; and
an isolation region having a device isolation insulating film formed therein,
wherein said impurity-diffused region and said isolation region are formed in a surficial portion of said semiconductor substrate,
wherein said gate electrode comprises a first portion configured to function as a gate electrode of said transistor, and a second portion configured to function as a connecting portion to said contact,
wherein said gate electrode extends unidirectionally with a constant width from said first portion to said second portion,
wherein said contact is formed on said isolation region, and
wherein said protective film is selectively formed on said isolation region, said protective film and said device isolation insulating film being composed of different materials.
8. The semiconductor device as claimed in claim 7 ,
wherein said contact is formed wider in width than said gate electrode in a sectional view along the direction of gate length, and
wherein said contact is in contact with said protective film beside said gate electrode.
9. The semiconductor device as claimed in claim 7 ,
wherein said protective film is composed of a silicon nitride film.
10. The semiconductor device as claimed in claim 7 ,
wherein said protective film is configured to protect said device isolation insulating film when said contact hole is formed in said insulating interlayer.
11. A semiconductor device having transistors formed therein, comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
an insulating interlayer formed on said gate electrode;
a contact formed of an electro-conductive material filling a contact hole in said insulating interlayer a bottom of said contact reaching said gate electrode, said contact being connected with said gate electrode;
a protective film disposed between said semiconductor substrate and said gate electrode and below the connecting portion between said gate electrode and said contact, said protective film formed wider in width than said gate electrode in a sectional view across a direction of gate length of said gate electrode,
wherein said contact is formed wider in width than said gate electrode in a sectional view along the direction of gate length, and
wherein said contact is in contact with said protective film beside said gate electrode.
12. The semiconductor device as claimed in claim 11 , further comprising:
an impurity-diffused region; and
an isolation region having a device isolation insulating film formed therein,
said impurity-diffused region and said isolation region formed in a surficial portion of said semiconductor substrate,
wherein said gate electrode comprises a first portion configured to function as a gate electrode of said transistor, and a second portion configured to function as a connecting portion to said contact, and
wherein said gate electrode extends unidirectionally with a constant width from said first portion to said second portion.
13. The semiconductor device as claimed in claim 11 ,
wherein said protective film is composed of a silicon nitride film.
14. The semiconductor device as claimed in claim 11 , further comprising:
an impurity-diffused region; and
an isolation region having a device isolation insulating film formed therein,
said impurity-diffused region and said isolation region formed in a surficial portion of said semiconductor substrate,
wherein said protective film is configured to protect said device isolation insulating film when said contact hole is formed in said insulating interlayer.