Method for forming bump of probe card

1. A method for forming a bump of a probe card, the method comprising steps of:

(a) forming a protective film pattern defining a bump region on a first surface of a semiconductor substrate;

(b) etching the bump region of the semiconductor substrate to form a through-hole in the semiconductor substrate, said through-hole corresponding to the bump region;

(c) removing the protective film pattern;

(d) forming an insulation layer on the entire surface of the semiconductor substrate and the entire surface of the through hole;

(e) bonding the semiconductor substrate to a ceramic substrate; and

(f) forming a bump filling up the through-hole.

2. The method in accordance with claim 1 , wherein the step (a) comprises:

forming a protective film on the semiconductor substrate;

forming a photoresist film pattern defining the bump region on the protective film;

etching the protective film exposed by the photoresist film pattern to form the protective film pattern; and

removing the photoresist film pattern.

3. The method in accordance with claim 1 , wherein the protective film pattern comprises one of a thermal oxide film, a CVD oxide film and a TEOS film.

4. The method in accordance with claim 1 , wherein the insulation layer comprises one of an oxide film and a nitride film.

5. The method in accordance with claim 1 , further comprising forming a bonding layer at an interface of the semiconductor substrate and the ceramic substrate.

6. The method in accordance with claim 5 , wherein the bonding layer comprises one of a photoresist film and an epoxy layer.

7. The method in accordance with claim 1 , wherein the step (f) comprises plating a nickel.

8. The method in accordance with claim 1 , further comprising bonding a glass layer to each of the first surface and a second surface of the semiconductor substrate, said second surface being opposite to the first surface.

9. The method in accordance with claim 8 , wherein the step (f) comprises:

(f-1) forming a seed layer on the first surface of the semiconductor substrate and the bump region;

(f-2) forming a second DFR on the second surface of the semiconductor substrate;

(f-3) forming a first metal layer in the bump region;

(f-4) polishing the first surface of the semiconductor substrate via a CMP process until the glass layer is exposed;

(f-5) removing the second DFR;

(f-6) forming a first DFR on the first surface of the semiconductor substrate;

(f-7) forming a third DFR exposing the bump region on the second surface of the semiconductor substrate; and

(f-8)forming a second metal layer in the bump region.

10. The method in accordance with claim 8 , further comprising forming a bonding layer on a surface of the ceramic substrate corresponding to the bump prior to carrying out the step (e).

11. The method in accordance with claim 10 , wherein the bonding layer comprises one of a Sn layer, an AgSn layer and an AuSn layer.

12. The method in accordance with claim 8 , wherein each of the first metal layer and the second metal layer comprises a nickel layer.

13. The method in accordance with claim 1 , further comprising attaching a cantilever beam to a top portion of the bump.