Electronic device, display device, interface circuit and differential amplification device, which are constituted by using thin-film transistors
View Patent ↗An integrated circuit, which is configured such that a MOS transistor and a bipolar transistor are integrated at the same time, is formed on an insulating substrate which includes a display device. An electronic device or a display includes a plurality of semiconductor devices which are formed by using a semiconductor thin film and are formed in the semiconductor thin film that is provided on an insulating substrate and is crystallized in a predetermined direction. The plurality of semiconductor devices include a MOS transistor and at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin film transistor.
1. An electronic device including an insulation film formed on an insulating substrate,
a non-crystallized semiconductor thin film formed on the insulation film,
a crystallized region in which a predetermined transistor formation region of the non-crystallized semiconductor thin film is crystallized in a lateral direction, and
a plurality of semiconductor devices which are formed in the non-crystallized semiconductor thin film or the crystallized region on the insulation film, the plurality of semiconductor devices including:
a MOS thin-film transistor; and
at least either one of a lateral bipolar thin-film transistor and a MOS-bipolar hybrid thin-film transistor, wherein
a base region or a channel region of the lateral bipolar thin-film transistor and the MOS-bipolar hybrid thin-film transistor is provided in a single crystallized region, and the channel region of the MOS thin-film transistor is provided in the non-crystallized semiconductor thin film or the crystallized region, and
directions of movement of carriers in the MOS thin-film transistor, the lateral bipolar thin-film transistor and the MOS-bipolar hybrid thin-film transistor formed in the crystallized region are parallel to the direction of the crystallization.
2. The electronic device according to claim 1 , wherein no crystal grain boundary is present in the base region or the channel region of the MOS thin-film transistor, the lateral bipolar thin-film transistor and the MOS-bipolar hybrid thin-film transistor formed in the crystallized region.
3. The electronic device according to claim 1 , wherein a thickness of the non-crystallized semiconductor thin film is 30 nm to 360 nm.
4. The electronic device according to claim 1 , wherein a base length of the lateral bipolar thin-film transistor is 2 μm or less.
5. The electronic device according to claim 1 , wherein a minimum value of the base length of the lateral bipolar hybrid thin-film transistor is 2 μm or less.
6. The electronic device according to claim 1 , wherein a width of the base region of the lateral bipolar thin-film transistor is 5 μm or less.
7. The electronic device according to claim 1 , wherein a minimum value of a gate length of the MOS thin-film transistor is 1 μm or less.
8. The electronic device according to claim 1 , wherein the crystallized region in which the predetermined transistor formation region of the non-crystallized semiconductor thin film is crystallized in a lateral direction forms a temperature gradient in the predetermined transistor formation region of the non-crystallized semiconductor thin film to melt the non-crystallized semiconductor thin film, a base length of the lateral bipolar thin- film transistor, which is a re-crystallized region, being 2 μm or less.