IP Library Granted Patent US 8,258,624
Granted Patent B2
US 8,258,624 · App. 11/837,211 · Granted Sep 4, 2012

Method for fabricating a semiconductor and semiconductor package

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Quick Facts
Patent No.
US 8,258,624
App. No.
11/837,211
Granted
Sep 4, 2012
Kind
B2
Abstract

A method for fabricating a semiconductor chip module and a semiconductor chip package is disclosed. One embodiment provides a first layer, a second layer, and a base layer. The first layer is disposed on the base layer, and the second layer is disposed on the first layer. A plurality of semiconductor chips is applied above the second layer, and the second layer with the applied semiconductor chips is separated from the first layer.

Claims (14)

1. A semiconductor chip package, comprising:

at least one semiconductor chip comprising contact pads on a first surface of the chip;

a material layer covering at least partly the semiconductor chip, except for the first surface of the chip;

a dielectric layer situated on the first surface of the chip, the dielectric layer comprising vias aligned with the contact pads, wherein the vias are filled with conductive ink; and

a seed laver arranged between the conductive ink and the first surface of the semiconductor chip.

2. The semiconductor chip package of claim 1 , wherein the dielectric layer comprises a material with at least one additive, which releases a catalytic starter upon irradiation which enables metal deposition, in particular by chemical plating, or electrically conducting material upon irradiation, or an electrically conducting material upon irradiation.

3. The semiconductor chip package of claim 1 , further comprising:

a wiring layer comprising a contact area connected with the vias.

4. The semiconductor chip package of claim 3 , further comprising:

a solder resist layer applied above the wiring layer, the solder resist layer comprising an opening in which the contact area is exposed.

5. The semiconductor chip package of claim 4 , further comprising:

a solder ball applied above the opening of the solder resist layer, the solder ball being electrically connected with the contact area.

6. The semiconductor chip package of claim 1 , wherein the dielectric layer is arranged between the seed layer and the first surface of the semiconductor chip.

7. The semiconductor chip package of claim 1 , wherein the seed layer is substantially arranged in parallel to the first surface of the semiconductor chip and a part of the conductive ink is laterally bounded by the seed layer.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2022
From: INTEL CORPORATION
To: TAHOE RESEARCH, LTD.
Reel/Frame 061827/0686 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2022
From: INTEL DEUTSCHLAND GMBH
To: INTEL CORPORATION
Reel/Frame 061356/0001 →
CHANGE OF NAME Recorded Nov 6, 2015
From: INTEL MOBILE COMMUNICATIONS GMBH
To: INTEL DEUTSCHLAND GMBH
Reel/Frame 037057/0061 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 19, 2012
From: INTEL MOBILE COMMUNICATIONS TECHNOLOGY GMBH
To: INTEL MOBILE COMMUNICATIONS GMBH
Reel/Frame 027556/0709 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2012
From: INFINEON TECHNOLOGIES AG
To: INTEL MOBILE COMMUNICATIONS TECHNOLOGY GMBH
Reel/Frame 027548/0623 →