Methods and Systems of Dielectric Film Materials For Use in Capacitors
Methods and systems of dielectric film materials to be used in capacitors. At least some of the illustrative embodiments are dielectric materials in the form of polymer film comprising a blend of polyvinylidene fluoride (PVDF) and at least one selected from the group consisting of: polyethylene terephthalate (PET); polycarbonate (PC); polyethylene naphthalate (PEN); polyphenylene sulfide (PPS); polytetrafluoroethylene (PTFE); polystyrene (PST); polysulphone (PS); polyethermide (PEM); and polyimide (PI).
1 . A dielectric material configured to be used in a capacitor, the dielectric material in the form of polymer film comprising a blend of polyvinylidene fluoride (PVDF) and at least one polar material selected from the group consisting of: polyethylene terephthalate (PET); polycarbonate (PC); polyethylene naphthalate (PEN); polyphenylene sulfide (PPS); polytetrafluoroethylene (PTFE); polystyrene (PST); polysulphone (PS); polyethermide (PEM); and polyimide (PI).
2 . The dielectric material according to claim 1 wherein the polymer film is formed from a melt-cast blend.
3 . The dielectric material according to claim 1 wherein the polymer film is biaxially oriented.
4 . The dielectric material according to claim 1 wherein the polymer film is a blend of at least one selected from the group consisting of: homopolymers; copolymers; and homopolymers and copolymers.
5 . The dielectric material according to claim 1 wherein the polymers of the blend have at least one selected from the group consisting of: melt-flow characteristics within about 100 Degrees C.; and viscosities within about 10,000 Pascal-Seconds.
6 . The dielectric material according to claim 1 wherein the polymers of the blend have at least one selected from the group consisting of: melt-flow characteristics within about 75 Degrees C.; and viscosities within about 1000 Pascal-Seconds.
7 . The dielectric material according to claim 1 further comprising a component to substantially prevent the dielectric material from sticking to film transporting rolls during film formation.
8 . The dielectric material according to claim 7 wherein said component is at least one selected from the group consisting of: silica; and calcium carbonate.
9 . The dielectric material according to claim 1 wherein the polymers of the blend are mixed in solid form, and extruded into melt-cast sheets.
10 . The dielectric material according to claim 1 wherein the polymer film has a thickness in a range from about 0.5 to about 25 micro-meters.
11 . The dielectric material according to claim 1 wherein the polymer film has a concentration of PVDF from about 0.01 (1%) to about 0.99 (99%).
12 . The dielectric material according to claim 1 wherein the polymer film has a concentration of PVDF from between about 0.01 (1%) to about 0.30 (30%).
13 . A method comprising extruding into melt-cast sheets a blend of polyvinylidene fluoride (PVDF) and a second polymer being at least one selected from the group consisting of: polyethylene terephthalate (PET); polycarbonate (PC); polyethylene naphthalate (PEN); polyphenylene sulfide (PPS); polytetrafluoroethylene (PTFE); polystyrene (PST); polysulphone (PS); polyethermide (PEM); and polyimide (PI).
14 . The method according to claim 13 further comprising blending the PVDF and the second polymer in solid form.
15 . The method according to claim 14 wherein blending further comprises feeding the PVDF and the second polymer by way of a twin-screw extruder.
16 . The method according to claim 13 further comprising, prior to the extruding, drying the PVDF and the second polymer at a temperature less than the melting point of either the PVDF or the second polymer.
17 . The method according to claim 13 further comprising quenching the melt-cast sheet.
18 . The method according to claim 17 wherein quenching further comprises quenching using at least one selected from the group consisting of: a rapid air-cool jet impinging on the melt-cast sheet; and a liquid-cooled chill-wheel.
19 . The method according to claim 13 further comprising:
electrostatically pinning the melt-cast sheet to a liquid-cooled chill-wheel; and
quenching the melt-cast sheet over a liquid-cooled chill-wheel.
20 . The method according to claim 13 further comprising biaxially orienting the melt-cast sheet into an oriented film having a thickness from about 0.5 to about 25 micro-meters.
21 . The method according to claim 20 wherein biaxially orienting further comprises:
performing a machine direction orientation (MDO); and
performing a transverse-direction orientation (TDO).
22 . The method according to claim 21 wherein performing the MDO further comprises stretching melt-cast sheet from about 1.5 to about 15 times an original length.
23 . The method according to claim 21 wherein performing the TDO further comprises stretching the melt-cast sheet from about 1.5 to about 15 times an original width.
24 . The method according to claim 21 further comprising annealing the oriented film during performance of the TDO.
25 . The method according to claim 13 wherein extruding further comprises extruding a blend of PVDF and the second polymer where the PVDF has a concentration about 0.01 (1%) to about 0.99 (99%).
26 . The method according to claim 13 wherein extruding further comprises extruding a blend of PVDF and the second polymer where the PVDF has a concentration about 0.01 (1%) to about 0.30 (30%).
27 . A film capacitor comprising:
a dielectric film comprising a blend of polyvinylidene fluoride (PVDF) and a second polymer selected from the group consisting of: polyethylene terephthalate (PET); polycarbonate (PC); polyethylene naphthalate (PEN); polyphenylene sulfide (PPS); polytetrafluoroethylene (PTFE); polystyrene (PST); polysulphone (PS); polyethermide (PEM); and polyimide (PI);
a first metal film abutting the dielectric film on a first side of the dielectric film;
a second metal film abutting the dielectric film on a second side of the dielectric film;
a first termination electrically coupled to the first metal film; and
a second termination electrically coupled to the second metal film.
28 . The film capacitor according to claim 27 wherein the first metal film is deposited directly on the first side of the dielectric film.
29 . The film capacitor according to claim 28 wherein the first metal film is deposited via a thermal deposition process.
30 . The film capacitor according to claim 28 wherein depositing further comprises depositing a metal having an electrical resistance from about 0.1 ohms per square to about 1000 ohms per square.
31 . The film capacitor according to claim 27 wherein the dielectric film has a concentration of PVDF from about 0.01 (1%) to about 0.99 (99%).
32 . The film capacitor according to claim 27 wherein the dielectric film has a concentration of PVDF from between about 0.01 (1%) to about 0.30 (30%).
33 . The film capacitor according to claim 27 wherein capacitor has at least one selected from the group consisting of: a wound configuration; and a stacked configuration.
34 . The film capacitor according to claim 27 wherein the capacitor is impregnated with a dielectric fluid and hermetically sealed.
35 . A method of manufacturing dielectric film comprising:
selecting at least two polymers according to a desired property of the dielectric film, the desired property being at least one selected from the group consisting of: dielectric constant; dielectric strength; insulation resistance; and operating temperature;
extruding a blend of the two polymers to create a melt-cast sheet; and
stretching the melt-cast sheet into an oriented film having a thickness from about 0.5 to about 25 micro-meters.
36 . The method according to claim 35 further comprising blending the at least two polymers in solid form.
37 . The method according to claim 35 further comprising coating the film with a polymeric material configured to at least one selected from the group consisting of: seal defects of the film; and harden a surface of the film.
38 . The method according to claim 35 depositing a metal layer on a first side of the film.
39 . The method according to claim 38 wherein depositing further comprises depositing a metal having an electrical resistance from about 0.1 ohms per square to about 1000 ohms per square.
40 . The method according to claim 35 wherein selecting further comprises selecting polyvinylidene fluoride (PVDF) and at least one polymer selected from the group consisting of: polyethylene terephthalate (PET); polycarbonate (PC); polyethylene naphthalate (PEN); polyphenylene sulfide (PPS); polytetrafluoroethylene (PTFE); polystyrene (PST); polysulphone (PS); polyethermide (PEM); and polyimide (PI).