IP Library Granted Patent US 7,727,847
Granted Patent B2
US 7,727,847 · App. 11/840,043 · Granted Jun 1, 2010

Method for manufacturing display device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 7,727,847
App. No.
11/840,043
Granted
Jun 1, 2010
Kind
B2
Abstract

A light-absorbing layer is selectively formed over an insulating surface, an insulating layer is formed over the insulating surface and the light-absorbing layer, the insulating surface, the light-absorbing layer, and the insulating layer are irradiated with laser light to selectively remove only the insulating layer above the light-absorbing layer in an irradiated region of the insulating layer so that an opening reaching the light-absorbing layer is formed in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing layer. By forming the conductive film in the opening so as to be in contact with the exposed light-absorbing layer, the conductive film can be electrically connected to the light-absorbing layer with the insulating layer interposed therebetween.

Claims (24)

1. A method for manufacturing a display device, comprising the steps of:

forming a light-absorbing layer selectively over an insulating surface;

forming an insulating layer over the insulating surface and the light-absorbing layer;

irradiating a region including the insulating surface, the light-absorbing layer, and the insulating layer with laser light without using a mask to selectively remove the insulating layer above the light-absorbing layer so that an opening reaching the light-absorbing layer is formed in the insulating layer; and

forming a conductive film in the opening so as to be in contact with the light-absorbing layer,

wherein the region irradiated with the laser light extends beyond at least one edge of the light-absorbing layer.

2. A method for manufacturing a display device, comprising the steps of:

forming a plurality of light-absorbing layers over an insulating surface;

forming an insulating layer over the insulating surface and the plurality of light-absorbing layers;

irradiating a region including the insulating surface, the plurality of light-absorbing layers, and the insulating layer with laser light without using a mask to selectively remove the insulating layer above the plurality of light-absorbing layers so that a plurality of openings is formed in the insulating layer; and

forming a conductive film in the plurality of openings so as to be in contact with the plurality of light-absorbing layers,

wherein the region irradiated with the laser light extends beyond at least one edge of the light-absorbing layer.

3. The method for manufacturing the display device according to any one of claims 1 to 2 , wherein the light-absorbing layer is formed of a conductive material.

4. The method for manufacturing the display device according to claim 3 , wherein the light-absorbing layer comprises a material selected from the group consisting of chromium, tantalum, silver, molybdenum, nickel, titanium, cobalt, copper, aluminum, and a combination thereof.

5. The method for manufacturing the display device according to any one of claims 1 to 2 , wherein the light-absorbing layer is formed of a semiconductor material.

6. The method for manufacturing the display device according to claim 5 , wherein the light-absorbing layer is formed of silicon.

7. The method for manufacturing the display device according to any one of claims 1 to 2 , wherein the opening is formed by the laser light with a wavelength, which is transmitted through the insulating layer.

8. The method for manufacturing the display device according to any one of claims 1 to 2 , wherein the conductive film comprises at least one material selected from the group consisting of indium tin oxide, indium tin oxide containing silicon oxide and zinc oxide.

9. The method for manufacturing the display device according to any one of claims 1 to 2 , wherein a part of a side surface of the opening is substantially aligned with at least one side surface of the light-absorbing layer.

10. The method for manufacturing the display device according to any one of claims 1 to 2 , wherein a shape of the opening is a shape of a region where the region irradiated with the laser light and the light-absorbing layer are overlapped.

11. The method for manufacturing the display device according to claim 1 or 2 , wherein the light-absorbing layer is a gate electrode layer.

12. The method for manufacturing the display device according to claim 1 or 2 , wherein the light-absorbing layer is a source or drain electrode layer.

13. The method for manufacturing the display device according to any one of claims 1 to 2 , wherein the display device is a light-emitting display device.

14. The method for manufacturing the display device according to any one of claims 1 to 2 , wherein the display device is a liquid crystal display device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 16, 2007
From: TANAKA, KOICHIRO, MR; ARAI, YASUYUKI, MR
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 019706/0877 →
Priority Claims (1)
JP 2006-228350 · Aug 24, 2006 · national
Continuity (1)
Related Publication 20080050851A1 · Feb 28, 2008