Top layers of metal for high performance IC's

1. An integrated circuit chip comprising:

a silicon substrate;

multiple devices in and on said silicon substrate, wherein said multiple devices comprise a transistor in and on said silicon substrate;

a first dielectric layer over said silicon substrate;

a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said multiple devices, and wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer;

a second dielectric layer between said first and second metal layers;

a passivation layer over said metallization structure and over said first and second dielectric layers, wherein said passivation layer comprises a nitride layer;

multiple power or ground pads arranged in an area array in a first region of said integrated circuit chip, wherein said area array has more than three rows and more than three columns, and wherein all pads in said area array are said multiple power or ground pads;

multiple first peripheral pads arranged along multiple edges of said integrated circuit chip;

multiple metal traces over said passivation layer;

multiple second peripheral pads arranged in more than two rings surrounding said multiple power or ground pads and in a second region surrounding said first region, wherein said multiple second peripheral pads in each of said more than two rings comprise more than ten signal pads continuously arranged, wherein one of said more than ten signal pads in one of said more than two rings is connected to one of said multiple first peripheral pads through one of said multiple metal traces, and said one of said more than ten signal pads in said one of said more than two rings has a position from a top view different from that of said one of said multiple first peripheral pads; and

multiple metal bumps on said multiple second peripheral pads.

2. The integrated circuit chip of claim 1 , wherein said metallization structure comprises electroplated copper.

3. The integrated circuit chip of claim 1 , wherein said multiple metal bumps comprise multiple solder bumps over said multiple second peripheral pads.

4. The integrated circuit chip of claim 1 , wherein said nitride layer has a thickness between 0.5 micrometers and 2 micrometers.

5. The integrated circuit chip of claim 1 , wherein said passivation layer further comprises an oxide layer under said nitride layer.

6. The integrated circuit chip of claim 1 , wherein said area array has more than four rows and more than four columns.

7. The integrated circuit chip of claim 1 , wherein said multiple metal traces comprise electroplated copper.

8. The integrated circuit chip of claim 1 further comprising a polymer layer on said passivation layer, wherein said multiple metal traces are further on said polymer layer.

9. The integrated circuit chip of claim 8 , wherein said polymer layer has a thickness between 2 and 30 micrometers.

10. The integrated circuit chip of claim 8 , wherein said polymer layer comprises polyimide.

11. An integrated circuit chip comprising:

a silicon substrate;

multiple devices in and on said silicon substrate, wherein said multiple devices comprise a transistor in and on said silicon substrate;

a first dielectric layer over said silicon substrate;

a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said multiple devices, and wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer;

a second dielectric layer between said first and second metal layers;

a passivation layer over said metallization structure and over said first and second dielectric layers, wherein said passivation layer comprises a nitride layer;

multiple power or ground pads arranged in an area array in a region of said integrated circuit chip, wherein said area array has more than three rows defined as multiple first rows and more than three columns, and wherein all pads in said area array are said multiple power or ground pads;

multiple first peripheral pads arranged in more than two rows defined as multiple second rows along a first edge of said integrated circuit chip, wherein said multiple first peripheral pads in each of said multiple second rows comprise more than ten signal pads continuously arranged, and wherein a first pitch between every neighboring two of said multiple first peripheral pads in each of said multiple second rows is different from a second pitch between every neighboring two of said multiple power or ground pads in each of said multiple first rows;

multiple second peripheral pads arranged in more than two rows defined as multiple third rows along a second edge of said integrated circuit chip, wherein said second edge is opposite to said first edge, wherein said multiple second peripheral pads in each of said multiple third rows comprise more than ten signal pads continuously arranged, and wherein said multiple first rows are between said multiple second rows and said multiple third rows; and

multiple metal bumps on said multiple first and second peripheral pads.

12. The integrated circuit chip of claim 11 , wherein said metallization structure comprises electroplated copper.

13. The integrated circuit chip of claim 11 , wherein said multiple metal bumps comprise multiple solder bumps over said multiple second peripheral pads.

14. The integrated circuit chip of claim 11 , wherein said nitride layer has a thickness between 0.5 micrometers and 2 micrometers.

15. The integrated circuit chip of claim 11 , wherein said passivation layer further comprises an oxide layer under said nitride layer.

16. The integrated circuit chip of claim 11 , wherein said area array has more than four rows and more than four columns.

17. The integrated circuit chip of claim 11 , wherein said first pitch is smaller than said second pitch.