Semiconductor device and method of manufacturing the same
There is provided a solution to the problem of the poor adhesion in the pad portion while inhibiting the dishing in the pad portion. An SiON film, which covers insulating areas and has an opening above Cu pad areas, is formed, and a barrier metal film is formed in the opening of the SiON film. Such constitution provides the structure, in which the upper portion of the interfaces between the Cu pad areas and the insulating areas are covered by the SiON film.
1. A semiconductor device comprising:
a bonding pad that is an electric coupling for an external circuit, said bonding pad having at least one metal area and a plurality of insulating areas with a plurality of interfaces therebetween;
an insulating film disposed on said bonding pad, said insulating film having an opening exposing at least part of said metal area, said insulating film covering all of said plurality of interfaces closest to a center of said opening; and
a diffusion barrier film on said bonding pad beneath said insulating film.
2. The semiconductor device according to claim 1 , wherein said plurality of insulating areas are separately provided within said bonding pad.
3. The semiconductor device according to claim 1 , further comprising an electrically conductive film on said insulating film and that is electrically connected to said diffusion barrier film.
4. The semiconductor device according to claim 1 , wherein said insulating film comprises SiON.
5. The semiconductor device according to claim 1 , wherein at least one of said plurality of insulating areas and its associated interface are entirely inside an outer periphery of said opening and covered with a portion of said insulating film.
6. The semiconductor device according to claim 5 , wherein more than one of said plurality of insulating areas and its associated interface are entirely inside the outer periphery of said opening and covered with a portion of said insulating film.