Memory device including phase-changeable material region and method of fabricating the same

1. A memory device comprising:

first and second electrodes; and

a phase-changeable material region disposed between the first and second electrodes and comprising first and second portions contacting respective ones of the first and second electrodes and a third portion interconnecting the first and second portions and configured to preferentially heat with respect to the first and second portions responsive to a current passing between the first and second electrodes.

2. The device of claim 1 , wherein the third portion comprises a current-densifying portion.

3. The device of claim 2 , wherein the first and second portions of the phase-changeable material region contact respective ones of the first an second electrodes at respective first and second electrode contact surfaces and wherein the third portion has a cross-sectional area that is less than areas of each of the first and second contact surfaces.

4. The device of claim 1 , wherein phase change occurs at the third portion.

5. The device of claim 1 :

wherein the first portion comprises a first planar region on the first electrode;

wherein the third portion comprises a filament portion extending from the first region opposite the first electrode through an opening in an insulation layer on the first region;

wherein the second portion comprises a second planar region on the insulation layer and the filament portion; and

wherein the second electrode is disposed on the second planar region opposite the filament portion.

6. A memory device comprising:

first and second electrodes; and

a phase-changeable material region disposed between the first and second electrodes and comprising a first portion in contact with the first electrode, a second portion in contact with the second electrode, and a filamentous third portion connecting the first and second portions.

7. The memory device of claim 6 , wherein a contact area of the first portion and the first electrode and a contact area of the second portion and the second electrode are each greater than a cross-sectional area of the third portion.

8. The memory device of claim 6 , wherein the first and second electrodes and the phase-changeable material region are configured to confine phase change substantially to the third portion.

9. A method of fabricating a memory device comprising:

forming first and second electrodes; and

forming a phase-changeable material region in contact with the first and second electrodes and comprising a first portion in contact with the first electrode, a second portion in contact with the second electrode, and a filamentous third portion connecting the first and second portions.

10. The method of claim 9 , wherein a contact area between the phase-changeable material region and the first electrode and a contact area between the phase-changeable material region and the second electrode are each greater than a cross sectional area of the third portion.

11. The method of claim 9 :

wherein forming first and second electrodes comprises forming the first electrode on a substrate;

wherein forming a phase-changeable material region in contact with the first and second electrodes and comprising a first portion in contact with the first electrode, a second portion in contact with the second electrode, and a filamentous third portion connecting the first and second portions comprises forming the phase-changeable material region on the first electrode; and

wherein forming first and second electrodes further comprises forming the second electrode on the phase-changeable material region.

12. The method of claim 11 , wherein forming the phase-changeable material region on the first electrode comprises:

forming a first insulation layer on the first electrode;

forming a second insulation layer on the first insulation layer;

forming an opening in the second insulation layer exposing the first insulation layer;

etching the first insulation layer via the first opening to form a void above the first electrode;

forming a phase-changeable material layer on the second insulation layer and occupying the void and the opening in the second insulation layer; and

patterning a portion of the phase-changeable material layer on the second insulation layer.

13. The method of claim 12 , wherein etching the first insulation layer via the first opening to form a void above the first electrode comprises etching the first insulation layer laterally with respect to the opening to form the void.

14. The method of claim 11 , wherein the first electrode comprises TiN, TaN, WN, MoN, NbN, TiSiN, TiAlN, TiBN, ZrSiN, WSiN, WBN, ZrAlN, MoSiN, MoAlN, TaSiN, TaAlN, Ti, W, Mo, Ta, TiSi, TaSi, TiON, TiAlON, WON, TaON, and/or a conductive carbon group.