Semiconductor device with gel-type thermal interface material
View Patent ↗Various methods and apparatus for establishing a thermal pathway for a semiconductor device are disclosed. In one aspect, a method of manufacturing is provided that includes forming a metal layer on a semiconductor chip and forming a gel-type thermal interface material layer on the metal layer. A solvent and a catalyst material are applied to the metal layer prior to forming the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.
1. A method of manufacturing, comprising:
forming a metal layer on a semiconductor chip;
applying a gel-type thermal interface material layer on the metal layer; and
applying solvent and a catalyst material to the metal layer prior to applying the gel-type thermal interface material layer to facilitate bonding between the gel-type thermal interface material layer and the metal layer.
2. The method of claim 1 , wherein the forming the metal layer comprises forming a gold layer.
3. The method of claim 1 , wherein the applying the gel-type thermal interface material layer comprises applying a layer of silicone.
4. The method of claim 3 , wherein the applying the gel-type thermal interface material layer comprises applying a layer of silicone containing aluminum and zinc oxide.
5. The method of claim 1 , wherein the applying a solvent and a catalyst comprises applying a mixture of an alcohol and platinum.
6. The method of claim 1 , comprising incorporating a catalyst into the metal layer prior to applying the gel-type thermal interface material layer.
7. The method of claim 1 , comprising coupling the semiconductor chip to a substrate.
8. The method of claim 7 , comprising coupling a heat spreader to the semiconductor chip.
9. The method of claim 8 , wherein the coupling the heat spreader comprises coupling a lid to the semiconductor chip.
10. A method of manufacturing, comprising:
forming a metal layer on a semiconductor chip, the metal layer including a catalyst;
applying a gel-type thermal interface material layer on the metal layer; and
curing the gel-type thermal interface material layer, the catalyst facilitating bonding between the gel-type thermal interface material layer and the metal layer.
11. The method of claim 10 , wherein the forming the metal layer comprises sputtering.
12. The method of claim 10 , wherein the forming the metal layer comprises sputtering a stream of gold, and a platinum catalyst.
13. The method of claim 10 , wherein the applying the gel-type thermal interface material layer comprises forming a layer of silicone.
14. The method of claim 13 , wherein the applying the gel-type thermal interface material layer comprises applying a layer of silicone containing aluminum and zinc oxide.
15. The method of claim 10 , comprising coupling the semiconductor chip to a substrate.
16. The method of claim 15 , comprising coupling a heat spreader to the semiconductor chip.
17. The method of claim 16 , wherein the coupling the heat spreader comprises coupling a lid to the semiconductor chip.
18. An apparatus, comprising:
a semiconductor chip having a metal layer;
a gel-type thermal interface material layer on the metal layer; and
whereby the metal layer includes a catalyst to facilitate bonding between the gel-type thermal interface material layer and the metal layer.
19. The apparatus of claim 18 , wherein the metal layer comprises a gold layer.
20. The apparatus of claim 18 , wherein the gel-type thermal interface material layer comprises a layer of silicone.
21. The apparatus of claim 20 , wherein the gel-type thermal interface material layer comprises a layer of silicone containing aluminum and zinc oxide.
22. The apparatus of claim 18 , comprising a solvent and a catalyst material positioned between the metal layer and the gel-type thermal interface material layer.
23. The apparatus of claim 22 , wherein the solvent comprises an alcohol and the catalyst comprises platinum.
24. The apparatus of claim 18 , wherein the catalyst comprises platinum.
25. The apparatus of claim 18 , comprising a substrate coupled to the semiconductor chip.
26. The apparatus of claim 25 , comprising a heat spreader coupled to the semiconductor chip.
27. The apparatus of claim 26 , wherein the heat spreader comprises a lid.