Method and apparatus of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, comprising: (a) obtaining a surface of a polishing target, wherein an insulating film and a metal film are exposed, and a part of said metal film is on said insulating film; and (b) polishing said surface having said exposed insulating film and said exposed metal film, wherein said step (b) includes: (b1) polishing said surface in a condition with high frictional force, and (b2) polishing said surface in a condition with usual frictional force lower than said high frictional force after said step (b1);

wherein said step (b1) includes: (b11) polishing said surface under a high load, wherein said step (b2) includes: (b21) polishing said surface under a usual load lower than said high load after said step (b11) and

wherein said step (b1) includes: (b11) polishing said surface under a high load for a duration of 1 to 15 seconds.

2. The method of manufacturing a semiconductor device, according to claim 1 , wherein said step (a) includes: (a1) forming concave portion in an insulating film which is formed on said polishing target, (a2) forming a metal film such that said metal film covers said concave portion and said insulating film and (a3) polishing said metal film to expose at least a part of said insulating film.

3. The method of manufacturing a semiconductor device, according to claim 1 , wherein a polishing table where said step (a) is executed is different from a polishing table where said (b) is executed.

4. The method of manufacturing a semiconductor device, according to claim 1 , wherein said metal film includes:

a barrier layer including TiN layer, and

a tungsten film layer formed on said barrier layer.

5. The method of manufacturing a semiconductor device, according to claim 4 , wherein said barrier layer is a lamination layer including TiN and Ti.

6. The method of manufacturing a semiconductor device, according to claim 4 , wherein said step (a) includes:

(a4) removing said tungsten film layer, and

(a5) removing said barrier layer,

wherein a polishing table where said step (a4) is executed is different from a polishing table where said (a5) is executed.

7. The method of manufacturing a semiconductor device, according to claim 1 , wherein said metal film includes: a copper film.

8. The method of manufacturing a semiconductor device, according to claim 7 , wherein said metal film further includes: a lamination film including Ta and TaN.

9. The method of manufacturing a semiconductor device, according to claim 1 , wherein said step (b11) includes:

(b111) polishing said surface under a first high load, and

(b112) polishing said surface under a second high load lower than said first high load and higher than said usual load, after said step (b111).

10. A method of manufacturing a semiconductor device, comprising: (a) obtaining a surface of a polishing target, wherein an insulating film and a metal film are exposed, and a part of said metal film is on said insulating film; and (b) polishing said surface having said exposed insulating film and said exposed metal film, wherein said step (b) includes: (b1) polishing said surface in a condition with high frictional force, and (b2) polishing said surface in a condition with usual frictional force lower than said high frictional force after said step (b1);

wherein said step (b) includes:

(b3) rotating a polishing table on which a polishing pad is stuck and pushing said polishing target against said polishing pad to polish said surface,

wherein said step (b1) includes:

(b12) polishing said surface at a high rotation rate of said polishing table,

wherein said step (b2) includes: (b22) polishing said surface at a usual rotation rate of said polishing table lower than said high rotation rate after said step (b12),

wherein said step (b1) includes: (b12) polishing said surface at a high rotation rate of said polishing table for a duration of 1 to 15 seconds.

11. The method of manufacturing a semiconductor device, according to claim 10 , wherein said step (b12) includes:

(b121) polishing said surface at a first high rotation rate, and

(b122) polishing said surface at a second high rotation rate lower than said first high rotation rate and higher than said usual rotation rate, after said step (b121).

12. The method of manufacturing a semiconductor device, according to claim 1 , further comprising:

(c) changing slurry and executing a finish polishing to finish said surface after said step (b).

13. The method of manufacturing a semiconductor device, according to claim 1 , wherein said polishing target is a film formed over a semiconductor wafer.

14. The method of manufacturing a semiconductor device, according to claim 1 , wherein said step (b) is executed by CMP (Chemical Mechanical Polishing) method.

15. The method of manufacturing the semiconductor device of claim 1 , wherein the polishing said surface in a condition with high frictional force is performed for a duration of 10 to 50 seconds.

16. The method of manufacturing the semiconductor device of claim 1 , wherein the polishing said surface in a condition with usual frictional force is performed for less time than the polishing said surface in a condition with high frictional force.

17. The method of manufacturing the semiconductor device of claim 1 , wherein the polishing said surface under a high load is performed for less time than the polishing said surface under a usual load.

18. The method of manufacturing the semiconductor device of claim 10 , wherein the polishing said surface in a condition with high frictional force is performed for a duration of 10 to 50 seconds.

19. The method of manufacturing the semiconductor device of claim 10 , wherein the polishing said surface in a condition with usual frictional force is performed for less time than the polishing said surface in a condition with high frictional force.