Method of fabricating semiconductor device
View Patent ↗A method of manufacturing a semiconductor device capable of preventing a cut portion from becoming chipped when dicing. The method of manufacturing a semiconductor device includes preparing a semiconductor wafer having an upper surface (first surface) including a plurality of device regions and partition regions for dividing the plurality of device regions, and a lower surface (second surface) opposite from the upper surface (first surface), forming upper layer wires on the device regions of the upper surface (first surface), etching the semiconductor wafer from a side of the lower surface (second surface) to form a through hole through which the upper layer wire is exposed, and to form a groove in a region of the lower surface (second surface) corresponding to the partition region of the upper surface (first surface), and dicing the semiconductor wafer to form individual device regions.
1. A method of manufacturing a semiconductor device comprising:
preparing a semiconductor wafer having a first surface including a plurality of device regions and partition regions for dividing the plurality of device regions and further having a second surface opposite from the first surface,
forming wires on each of the device regions of the first surface,
forming metal bumps on the wires,
forming a stopper film at the partition regions on the first surface of the semiconductor wafer, that limits excavation by etching,
etching the semiconductor wafer from a side of the second surface to form in each of the device regions a through hole that exposes a wire, and to form a groove that exposes the stopper film in a region of the second surface corresponding to a partition region of the first surface around each of the device regions, wherein a depth of the groove is equal to or greater than a depth of the through hole,
forming in the through holes penetrating electrodes that are electrically connected to the wires, and
dicing the semiconductor wafer to form individual device regions by cutting the semiconductor wafer along the groove from a side of the first surface.
2. A method of manufacturing a semiconductor device comprising:
preparing a semiconductor wafer having a first surface including a plurality of device regions and partition regions for dividing the plurality of device regions and further having a second surface opposite from the first surface,
forming wires on each of the device regions of the first surface,
forming metal bumps on the wires,
forming a stopper film at the partition regions on the first surface of the semiconductor wafer, that limits excavation by etching,
etching the semiconductor wafer from a side of the second surface to form in each of the device regions a through hole that exposes a wire, and to form a groove that exposes the stopper film in a region of the second surface corresponding to the partition region of the first surface around each of the device regions, and
forming in the through holes penetrating electrodes that are electrically connected to the wires
wherein a depth of the groove is equal to or larger than a depth of the through hole.
3. The method of manufacturing a semiconductor device of claim 1 , wherein a width of the groove is the same as a width of the through hole.
4. The method of manufacturing a semiconductor device of claim 2 , wherein a width of the groove is the same as a width of the through hole.
5. A method of manufacturing a semiconductor device comprising:
preparing a semiconductor wafer having a first surface including a plurality of device regions and partition regions for dividing the plurality of device regions and further having a second surface opposite from the first surface,
forming wires on each of the device regions of the first surface,
forming metal bumps on the wires,
forming a stopper film at the partition regions on the first surface of the semiconductor wafer, that limits excavation by etching,
etching the semiconductor wafer from a side of the second surface to form a through hole in at least one of the device regions that exposes a wire, and to form a groove that exposes the stopper film in a region of the second surface corresponding to a partition region of the first surface around each of the device regions, the through hole and the groove are etched simultaneously, wherein a depth of the groove is equal to or greater than a depth of the through hole,
forming in the through holes penetrating electrodes that are electrically connected to the wires, and
dicing the semiconductor wafer to form individual device regions by cutting the semiconductor wafer along the groove from a side of the first surface.
6. The method of manufacturing a semiconductor device of claim 5 , wherein said etching comprises etching the groove and the through hole to have a same depth.
7. The method of manufacturing a semiconductor device of claim 5 , wherein said etching comprises etching the groove entirely through the semiconductor wafer from the second surface to the first surface.