Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers
New anti-reflective or fill compositions having improved flow properties are provided. The compositions comprise a dendritic polymer dispersed or dissolved in a solvent system, and preferably a light attenuating compound, a crosslinking agent, and a catalyst. The inventive compositions can be used to protect contact or via holes from degradation during subsequent etching in the dual damascene process. The inventive compositions can also be applied to substrates (e.g., silicon wafers) to form anti-reflective coating layers having high etch rates which minimize or prevent reflection during subsequent photoresist exposure and developing.
1. The combination of a substrate having a surface and a cured protective layer on said surface, said cured protective layer being formed from an anti-reflective coating or fill composition comprising a dendritic polymer, a light attenuating compound, and a crosslinking agent dispersed or dissolved in a solvent system, wherein:
said polymer is a dendritic polymer selected from the group consisting of dendritic polyesters, dendritic polyols, dendritic polyethers, dendritic polyamines, and mixtures thereof;
said crosslinking agent is selected from the group consisting of melamines, glycourils, and mixtures thereof; and
said light attenuating compound is selected from the group consisting of 9-anthracene carboxylic acid, 9-hydroxy methyl anthracene, 3-hydroxy-2-naphthoic acid, 1,4-dihydroxy-2-naphthoic acid, 4-hydroxybenzoic acid, 3,4-hydroxy benzoic acid, and mixtures thereof.
2. The combination of claim 1 , wherein said substrate is a microelectronic substrate.
3. The combination of claim 1 , wherein said substrate comprises a silicon wafer.
4. The combination of claim 1 , wherein said substrate has a hole formed therein, said hole being defined by a bottom wall and sidewalls, and said cured protective layer being in contact with at least a portion of the surfaces of said bottom wall and sidewalls.
5. The combination of claim 4 , wherein the degree of leveling of said cured protective layer in said hole is at least about 85%.
6. The combination of claim 1 , wherein said dendritic polymer is a hyperbranched polymer.
7. The combination of claim 1 , wherein said composition has a viscosity of less than 10 cP.
8. The combination of claim 1 , wherein said composition comprises from about 0.2-10% by weight dendritic polymer, based upon the total weight of the composition taken as 100% by weight.
9. The combination of claim 1 , wherein said composition further comprises a catalyst.
10. The combination of claim 9 , wherein said compound is a catalyst selected from the group consisting of sulfonic acids, carboxylic acids, and mixtures thereof.
11. The combination of claim 1 , wherein said dendritic polymer has an average molecular weight of less than 15,000 g/mole.
12. The combination of claim 1 , wherein said dendritic polymer has a viscosity of less than 150×10 3 cP.
13. The combination of claim 1 , wherein said dendritic polymer has a hydroxyl number of at least 100 mg KOH/g of dendritic polymer.
14. The combination of claim 1 , wherein said composition comprises from about 90-99% by weight of said solvent system, based upon the total weight of the composition taken as 100% by weight.
15. The composition of claim 1 , wherein said solvent system has a boiling point of from about 100-200° C.