Post passivation interconnection schemes on top of the IC chips
View Patent ↗A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric, a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.
1. A chip comprising:
a silicon substrate;
an ESD circuit in or on said silicon substrate;
a first internal circuit in or on said silicon substrate;
a driver, receiver or I/O circuit in or on said silicon substrate;
a dielectric layer over said silicon substrate;
a first interconnecting structure over said silicon substrate and in said dielectric layer, wherein said first interconnecting structure is connected to a first terminal of said driver, receiver or I/O circuit;
a second interconnecting structure over said silicon substrate and in said dielectric layer, wherein said second interconnecting structure is connected to said first internal circuit;
a passivation layer over said dielectric layer, wherein said passivation layer comprises a nitride;
a first via in said passivation layer, wherein said first via is connected to said first interconnecting structure;
a second via in said passivation layer, wherein said second via is connected to said second interconnecting structure;
a third interconnecting structure over said passivation layer, wherein said third interconnecting structure is connected to said first and second vias, and wherein said first terminal is connected to said first internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure; and
an external connection point connected to said ESD circuit and to a second terminal of said driver, receiver or I/O circuit.
2. The chip of claim 1 further comprising a second internal circuit in or on said silicon substrate, wherein said second interconnecting structure is connected to said second internal circuit, wherein said first internal circuit is connected to said second internal circuit through said second interconnecting structure, and wherein said first terminal is connected to said second internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure.
3. The chip of claim 2 further comprising a third internal circuit in or on said silicon substrate, a fourth interconnecting structure over said silicon substrate and in said dielectric layer, wherein said fourth interconnecting structure is connected to said third internal circuit, and a third via in said passivation layer, wherein said third via is connected to said third and fourth interconnecting structures, wherein said first and second internal circuits are connected to said third internal circuit through, in sequence, said second interconnecting structure, said second via, said third interconnecting structure, said third via and said fourth interconnecting structure, and wherein said first terminal is connected to said third internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said third via and said fourth interconnecting structure.
4. The chip of claim 1 further comprising a second internal circuit in or on said silicon substrate, a fourth interconnecting structure over said silicon substrate and in said dielectric layer, wherein said fourth interconnecting structure is connected to said second internal circuit, and a third via in said passivation layer, wherein said third via is connected to said third and fourth interconnecting structures, wherein said first internal circuit is connected to said second internal circuit through, in sequence, said second interconnecting structure, said second via, said third interconnecting structure, said third via and said fourth interconnecting structure, and wherein said first terminal is connected to said second internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said third via and said fourth interconnecting structure.
5. The chip of claim 1 , wherein said external connection point provides an access to an external clock for said ESD circuit and for said second terminal.
6. The chip of claim 1 , wherein said external connection point provides an access to an external signal for said ESD circuit and for said second terminal.
7. The chip of claim 1 further comprising a polymer layer over said passivation layer, wherein said third interconnecting structure is in said polymer layer.
8. A chip comprising:
a silicon substrate;
an ESD circuit in or on said silicon substrate;
a first internal circuit in or on said silicon substrate;
a driver, receiver or I/O circuit in or on said silicon substrate;
a dielectric layer over said silicon substrate;
a first interconnecting structure over said silicon substrate and in said dielectric layer, wherein said first interconnecting structure is connected to a first terminal of said driver, receiver or I/O circuit;
a second interconnecting structure over said silicon substrate and in said dielectric layer, wherein said second interconnecting structure is connected to said first internal circuit;
a passivation layer over said dielectric layer, wherein said passivation layer comprises a nitride, and wherein one of multiple openings in said passivation layer has a transverse dimension between 0.5 and 30 micrometers;
a first via in one of said multiple openings, wherein said first via is connected to said first interconnecting structure;
a second via in one of said multiple openings, wherein said second via is connected to said second interconnecting structure;
a third interconnecting structure over said passivation layer, wherein said third interconnecting structure is connected to said first and second vias, and wherein said first terminal is connected to said first internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure; and
an external connection point connected to said ESD circuit and to a second terminal of said driver, receiver or I/O circuit.
9. The chip of claim 8 further comprising a second internal circuit in or on said silicon substrate, wherein said second interconnecting structure is connected to said second internal circuit, wherein said first internal circuit is connected to said second internal circuit through said second interconnecting structure, and wherein said first terminal is connected to said second internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure.
10. The chip of claim 9 further comprising a third internal circuit in or on said silicon substrate, a fourth interconnecting structure over said silicon substrate and in said dielectric layer, wherein said fourth interconnecting structure is connected to said third internal circuit, and a third via in one of said multiple openings, wherein said third via is connected to said third and fourth interconnecting structures, wherein said first and second internal circuits are connected to said third internal circuit through, in sequence, said second interconnecting structure, said second via, said third interconnecting structure, said third via and said fourth interconnecting structure, and wherein said first terminal is connected to said third internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said third via and said fourth interconnecting structure.
11. The chip of claim 8 further comprising a second internal circuit in or on said silicon substrate, a fourth interconnecting structure over said silicon substrate and in said dielectric layer, wherein said fourth interconnecting structure is connected to said second internal circuit, and a third via in one of said multiple openings, wherein said third via is connected to said third and fourth interconnecting structures, wherein said first internal circuit is connected to said second internal circuit through, in sequence, said second interconnecting structure, said second via, said third interconnecting structure, said third via and said fourth interconnecting structure, and wherein said first terminal is connected to said second internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said third via and said fourth interconnecting structure.
12. The chip of claim 8 , wherein said external connection point provides an access to an external clock for said ESD circuit and for said second terminal.
13. The chip of claim 8 , wherein said external connection point provides an access to an external signal for said ESD circuit and for said second terminal.
14. The chip of claim 8 further comprising a polymer layer over said passivation layer, wherein said third interconnecting structure is in said polymer layer.
15. A chip comprising:
a silicon substrate;
an ESD circuit in or on said silicon substrate;
a first internal circuit in or on said silicon substrate;
a driver, receiver or I/O circuit in or on said silicon substrate;
a dielectric system over said silicon substrate;
a first interconnecting structure over said silicon substrate and in said dielectric system, wherein said first interconnecting structure is connected to a first terminal of said driver, receiver or I/O circuit;
a second interconnecting structure over said silicon substrate and in said dielectric system, wherein said second interconnecting structure is connected to said first internal circuit;
multiple metal layers in said dielectric system, wherein said dielectric system comprises multiple dielectric layers between said multiple metal layers;
a passivation layer over said dielectric system and over said multiple metal layers, wherein said passivation layer comprises a nitride;
a first via in said passivation layer, wherein said first via is connected to said first interconnecting structure;
a second via in said passivation layer, wherein said second via is connected to said second interconnecting structure;
a third interconnecting structure over said passivation layer and over said first and second vias, wherein said third interconnecting structure comprises an interconnect line having a thickness greater than 1 micrometer and greater than those of said multiple metal layers, and wherein said first terminal is connected to said first internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure; and
an external connection point connected to said ESD circuit and to a second terminal of said driver, receiver or I/O circuit.
16. The chip of claim 15 further comprising a second internal circuit in or on said silicon substrate, wherein said second interconnecting structure is connected to said second internal circuit, wherein said first internal circuit is connected to said second internal circuit through said second interconnecting structure, and wherein said first terminal is connected to said second internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said second via and said second interconnecting structure.
17. The chip of claim 15 further comprising a second internal circuit in or on said silicon substrate, a fourth interconnecting structure over said silicon substrate and in said dielectric system, wherein said fourth interconnecting structure is connected to said second internal circuit, and a third via in said passivation layer, wherein said third via is connected to said third and fourth interconnecting structures, wherein said first internal circuit is connected to said second internal circuit through, in sequence, said second interconnecting structure, said second via, said third interconnecting structure, said third via and said fourth interconnecting structure, and wherein said first terminal is connected to said second internal circuit through, in sequence, said first interconnecting structure, said first via, said third interconnecting structure, said third via and said fourth interconnecting structure.
18. The chip of claim 15 , wherein said external connection point provides an access to an external clock for said ESD circuit and for said second terminal.
19. The chip of claim 15 , wherein said external connection point provides an access to an external signal for said ESD circuit and for said second terminal.
20. The chip of claim 15 further comprising a polymer system over said passivation layer, wherein said third interconnecting structure is in said polymer system.