Semiconductor device and method of manufacturing the same
Provided is a semiconductor device including a semiconductor chip, a film (first film) which is provided so as to cover an active region with a peripheral portion of the semiconductor chip being uncovered, and is made of a dielectric material having a low dielectric constant, and a package molding resin (sealing resin) provided so as to cover the semiconductor chip and the film. As a result, deterioration in contact property with the sealing resin is suppressed and a high frequency characteristic can be enhanced.
1. A semiconductor device, comprising:
a semiconductor chip;
a sealing resin provided so as to cover the semiconductor chip;
a plate-like first film which is provided between the semiconductor chip and the sealing resin so as to cover an active region with a peripheral portion of the semiconductor chip being uncovered, and is made of a dielectric material having a dielectric constant lower than that of the sealing resin; and
a second film which is provided between the first film and the sealing resin, and has higher compatibility with the sealing resin than compatibility of the first film,
wherein the first film is in direct contact with both the semiconductor chip and the second film.
2. A semiconductor device according to claim 1 , further comprising bonding pads provided on the semiconductor chip,
wherein the first film is formed only at an inner side of the bonding pads.
3. A semiconductor device according to claim 1 , wherein the first film is formed on the active region of the semiconductor chip.
4. A semiconductor device according to claim 1 , wherein the dielectric material comprises one of fluorine-containing elastomer and a polymer resin.
5. A semiconductor device according to claim 1 , wherein the semiconductor chip is mounted on a lead frame and connected by wire bonding.
6. A semiconductor device, comprising:
a semiconductor chip;
a sealing resin provided so as to cover the semiconductor chip;
a plate-like first film which is provided between the semiconductor chip and the sealing resin so as to cover an active region with a peripheral portion of the semiconductor chip being uncovered, and is made of a dielectric material having a dielectric constant lower than that of the sealing resin; and
a second film which is provided between the first film and the sealing resin, and has higher compatibility with the sealing resin than compatibility of the first film,
wherein the first film is formed only under a peripheral portion of the second film.