Methods of contacting the top layer of a BAW resonator
View Patent ↗Methods of contacting the top layer in a BAW device by depositing a metal layer over the BAW device, patterning the metal layer so that the metal layer extends over and contacts the top electrode layer of the BAW device only at a plurality of spaced apart locations adjacent the periphery of the active resonator area, and has a common region laterally displaced from the top and bottom electrodes and electrically interconnecting the parts of the metal layer extending over and contacting the top electrode of the BAW device at the plurality of spaced apart locations.
1. A BAW device comprising:
a bottom electrode;
a piezoelectric layer disposed over the bottom electrode;
a top electrode over the piezoelectric layer; and,
a metal contact layer extending over and contacting a the top electrode of the BAW device only at a plurality of spaced apart locations adjacent the periphery of the active area, and having a common region laterally displaced from the active resonator area.
2. The BAW device of claim 1 wherein the metal layer contacts the top electrode of the BAW device at each of a plurality of fingers integral with the common region of the metal layer.
3. A BAW device comprising:
a bottom electrode;
a piezoelectric layer over the bottom electrode;
a top electrode, the top electrode being exposed at least a plurality of spaced apart locations adjacent the periphery of the piezoelectric layer;
a metal layer over the top electrode patterned so that the metal layer has a plurality of fingers, each extending over the periphery of the bottom electrode and contacting the top electrode at a respective one of the spaced apart locations at which the top electrode was exposed, the patterned metal layer having a common region laterally displaced from the piezoelectric layer and electrically interconnecting the fingers.