Electronic device and method of manufacturing the same
The electronic device includes a first interconnect layer and a second interconnect layer. The second interconnect layer is provided on the lower surface of the first interconnect layer. The first interconnect layer includes a via plug (first conductive plug). An end face of the via plug on the side of the second interconnect layer is smaller in area than the opposite end face. The via plug is exposed on the surface of the first interconnect layer facing the second interconnect layer. An insulating resin forming the first interconnect layer is higher in thermal decomposition temperature than an insulating resin forming the second interconnect layer.
1. A method of manufacturing an electronic device, comprising:
forming a first interconnect layer including a first conductive plug, on a supporting substrate;
removing said supporting substrate to expose said first conductive plug; and
forming, after said removing said supporting substrate, a second interconnect layer in direct contact with an exposed surface of said first interconnect layer on which said supporting substrate was initially provided without a core layer provided therebetween, the second interconnect layer having high stress relief capability by being thicker than the first interconnect layer, and the forming the second interconnect layer includes employing a resin lower in thermal decomposition temperature than a resin employed in said forming said first interconnect layer,
wherein said second interconnect layer includes an interconnect, and said interconnect extends more in a horizontal direction than a vertical direction.
2. The method according to claim 1 , further comprising:
mounting an electronic component on said first interconnect layer, before said removing said supporting substrate.
3. The method according to claim 2 , further comprising:
forming an encapsulating resin on said first interconnect layer so as to cover said electronic component, between said mounting an electronic component and said removing said supporting substrate.
4. The method according to claim 1 ,
wherein said forming a second interconnect layer includes forming a second conductive plug so as to be connected to said first conductive plug.
5. The method according to claim 1 ,
wherein said forming a second interconnect layer includes forming the interconnect so as to be connected to said first conductive plug.
6. The method according to claim 1 ,
wherein said supporting substrate is a silicon substrate.
7. The method according to claim 1 , further comprising:
forming a second adhesive metal layer on said second interconnect layer or a second conductive plug provided in said second interconnect layer,
wherein said first interconnect layer is connected to said second interconnect layer or said second conductive plug via said second adhesive metal layer.
8. The method according to claim 7 , further comprising:
forming a first adhesive metal layer on a first conductive plug provided in said second interconnect layer,
wherein said first interconnect layer is connected to said second adhesive metal layer provided on said second interconnect layer or said second conductive plug via said first adhesive metal layer.