Scanning electron microscope and calibration of image distortion
View Patent ↗In method and apparatus for obtaining a scanning electron microscope image devoid of distortion by measuring a scanning distortion and calibrating the scanning distortion, there occurs a problem that an error takes place in dimension control owing to a scanning distortion of an electron beam. To cope with this problem, an image is obtained by scanning a predetermined region with the electron beam, a plurality of regions are selected from the image, the pattern pitch is measured in each of the regions and a scanning distortion amount is calculated from the result of measurement and then corrected.
1. A scanning electron microscope comprising:
an electron optics for scanning an electron beam on a predetermined region of a standard specimen whose pattern dimension or pattern pitch is known as a nominal value;
detection means for detecting secondary electrons or backscattering electrons generated under the scan of the electron beam; and
operation means for calculating a pattern dimension or pattern pitch in said predetermined region, wherein
said operation means includes means for forming an image from information of secondary electrons or backscattering electrons detected by said detector, means for forming a plurality of regions from said image, means for measuring a pattern dimension or pattern pitch in each of said plurality of formed regions, and means for calculating a scanning distortion amount of said electron beam to calculate a difference between the nominal value and the distribution of the pattern dimension or pattern pitch.
2. A scanning electron microscope according to claim 1 further comprising means for displaying said distribution of pattern dimension or pattern pitch.
3. A scanning electron microscope according to claim 1 , wherein said electron optics includes a deflector for deflecting said electron beam and controls a signal to said deflector in accordance with the calculated scanning distortion amount.
4. A scanning electron microscope according to claim 1 , wherein the in-plane magnification for the image is adjusted such that the pattern dimension or pattern pitch is made to be constant in accordance with the calculated scanning distortion amount.
5. A scanning electron microscope according to claim 1 , wherein
the scanning distortion amount of said electron beam is calculated at a plurality of different positions on said standard specimen.
6. A scanning electron microscope according to claim 1 , wherein measurement of the pattern dimension or pattern pitch in said region is carried out using FFT or a correlation function.
7. A scanning electron microscope according to claim 1 , wherein said standard specimen has mutually different pattern line widths or mutually differently spaced pattern pitches.
8. A scanning electron microscope according to claim 1 , wherein at least three or more patterns are included in said region.
9. A measurement method based on a scanning electron microscope comprising the steps of:
irradiating an electron beam on a predetermined illumination region of a specimen whose pattern dimension or pattern pitch is known as a nominal value to acquire an image;
selecting a plurality of arbitrary regions in said acquired image;
measuring pattern dimension or pattern pitch in each of the selected regions;
displaying distribution of the measured pattern dimensions or pattern pitches; and
calculating a scanning distortion amount of said scanning electron microscope to calculate a difference between the nominal value and the distribution of pattern dimensions or pattern pitches.